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				California Eastern Laboratories
Part No.	NX5313
OCR Text	...MF APPLICATIONS * FTTH PON (b-pon, G-PON, GE-PON 10 Km) system DESCRIPTION NEC's NX5313 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed f...
Description	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
File Size	157.66K / 4 Page	View it Online	Download Datasheet

				CEL[California Eastern Labs]
Part No.	NX5315EH-AZ NX5315EK-AZ NX5315
OCR Text	...mm APPLICATIONS * FTTH PON (b-pon, G-PON, GE-PON 10 Km) system DESCRIPTION NEC's NX5315 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed ...
Description	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
File Size	268.00K / 5 Page	View it Online	Download Datasheet

				California Eastern Laboratories
Part No.	NX5311
OCR Text	...mm APPLICATIONS * FTTH PON (b-pon, G-PON, GE-PON 10 km) system DESCRIPTION NEC's NX5311 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed f...
Description	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
File Size	156.15K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	NX5315
OCR Text	.../s. APPLICATION * FTTH PON (b-pon, G-PON, GE-PON 10 km) system FEATURES * Optical output power * Low threshold current * Differential Efficiency * InGaAs monitor PIN-PD * CAN package * Focal point Po = 13.0 mW lth = 6 mA d = 0.5 ...
Description	LASER DIODE
File Size	91.44K / 7 Page	View it Online	Download Datasheet

				CEL[California Eastern Labs]
Part No.	NX5313EH NX5313EK NX5313
OCR Text	...MF APPLICATIONS * FTTH PON (b-pon, G-PON, GE-PON 10 Km) system DESCRIPTION NEC's NX5313 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed f...
Description	1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
File Size	158.82K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	SA8028 SA8028W
OCR Text	...: CDMA 3G GSM TDMA GAIT : IS95-B,C WCDMA : WCDMA / UMTS : EDGE / GPRS : IS136 and EDGE : GSM and TDMA * * * * WLAN Wireless PDAs Sate...PON SR02176 Figure 1. HBCC24 pin configuration. ORDERING INFORMATION TYPE NUMBER PACKAGE N...
Description	ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers
File Size	274.73K / 28 Page	View it Online	Download Datasheet

				Micrel Semiconductor
Part No.	SY88232L11 SY88232L10
OCR Text	...burst mode applications: A-PON, b-pon, G-PON, E-PON, GE-PON ___________________________________________________________________________________________________________ Typical Application Micrel Inc. * 2180 Fortune Drive * San Jose...
Description	2.5Gbps Laser Diode Driver with Integrated Limiting Amplifier
File Size	644.00K / 18 Page	View it Online	Download Datasheet

				NEC
Part No.	NX5323EH
OCR Text	.../s. APPLICATION * FTTH PON (b-pon, G-PON, GE-PON 10 km) system FEATURES * Optical output power * Low threshold current * Differential Efficiency * InGaAs monitor PIN-PD * CAN package * Focal point Po = 13.0 mW lth = 7 mA d = 0.5 ...
Description	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
File Size	78.25K / 7 Page	View it Online	Download Datasheet

For b-pon Found Datasheets File :: 446 Search Time::3.5ms
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