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    HIP6020A HIP6020ACB

INTERSIL[Intersil Corporation]
Part No. HIP6020A HIP6020ACB
OCR Text ...ELECT high, UGATE2 is turned on continuously to provide a DC current flow path to VOUT2. FAULT / RT (Pin 13) This pin provides oscillator switching frequency adjustment. By placing a resistor (RT) from this pin to GND, the nominal 200kH...
Description Advanced Dual PWM and Dual Linear Power Controller

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    HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
Part No. HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62256ALP-I HY62256ALR1 HY62256ALR2-I HY62256ALT1 HY62256ALT1-I HY62256AP HY62256AP-I HY62256AR1 HY62256AR2-I HY62256AT1 HY62256AT1-I HY62256AJ-55 HY62256AJ-85 HY62256AJ-I-70 HY62256AJ-I-55 HY62256AJ-I-85 HY62256ALJ-85 HY62256ALJ-I-70 HY62256ALLJ-85 HY62256ALLJ-55 HY62256ALLJ-70 HY62256AJ-70 HY62256ALJ-I-85 HY62256ALLP-55
OCR Text ...or the read cycle. 2. Device is continuously selected /CS= VIL. 3. /OE =VIL. WRITE CYCLE 1 (/OE Clocked) 1 of 3 22/10/97 12:35 -sram/62256alt1 http://www.hea.com/hean2/sram/62256alt1.htm WRITE CYCLE 2 (/OE Low Fixed) Notes...
Description 32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
   32Kx8bit CMOS SRAM

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    IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61LV12816-10K IS61LV12816-10KI IS61LV12816-10LQ IS61LV12816-10LQI IS61LV1

Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution Inc]
Integrated Circuit Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Part No. IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61LV12816-10K IS61LV12816-10KI IS61LV12816-10LQ IS61LV12816-10LQI IS61LV12816-10T IS61LV12816-10TI IS61LV12816-12B IS61LV12816-12BI IS61LV12816-12K IS61LV12816-12KI IS61LV12816-12LQ IS61LV12816-12LQI IS61LV12816-12T IS61LV12816-12TI IS61LV12816-15B IS61LV12816-15BI IS61LV12816-15K IS61LV12816-15KI IS61LV12816-15LQ IS61LV12816-15LQI IS61LV12816-15T IS61LV12816-15TI IS61LV12816-8B IS61LV12816-8BI IS61LV12816-8K IS61LV12816-8KI IS61LV12816-8LQ IS61LV12816-8LQI IS61LV12816-8T IS61LV12816-8TI
OCR Text ... a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. 6 Integrated Silicon Solution, Inc. -- 1-800-379-4774 Rev. A 11/30/00 IS61LV12816 ...
Description 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44

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    IS61LV256-12J IS61LV256-12N IS61LV256-12T IS61LV256-15J IS61LV256-15N IS61LV256-15T IS61LV256-20J IS61LV256-20N IS61LV25

Integrated Silicon Solu...
Integrated Silicon Solution Inc
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Part No. IS61LV256-12J IS61LV256-12N IS61LV256-12T IS61LV256-15J IS61LV256-15N IS61LV256-15T IS61LV256-20J IS61LV256-20N IS61LV256-20T IS61LV256-25J IS61LV256-25N IS61LV256-25T IS61LV256- 61LV256
OCR Text ... a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. Integrated Silicon Solution, Inc. Rev. F 0296 SR81995LV61 2-5 IS61LV256 WRITE CYCLE SWITCHIN...
Description 32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28

File Size 99.95K  /  8 Page

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    IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL-10LQI IS61LV25616AL-10T IS61LV25616AL-10TI IS61LV25616AL-12B IS61LV25616AL-12K IS61LV25616AL-12KI IS61LV25616AL-12T IS61LV25616AL-12TI 61LV25616AL
OCR Text ... a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. A 02/21/03 7 ...
Description 20 AMP MINIATURE PC BOARD RELAY
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44

File Size 64.23K  /  12 Page

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    IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T IS61LV51216-10TI IS61LV51216-10TLI IS61LV51216-12T IS61LV51216-12TI IS6

Electronic Theatre Controls, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC
Integrated Silicon Solution Inc
Part No. IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T IS61LV51216-10TI IS61LV51216-10TLI IS61LV51216-12T IS61LV51216-12TI IS61LV51216-8M IS61LV51216-8MI IS61LV51216-8T IS61LV51216-8TI 61LV51216
OCR Text ... a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. 8 9 10 11 12 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. ...
Description 512K x 16 HIGH SPEED ASYNCHRONOUS 12k × 16高速异

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    IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61LV5128-10K IS61LV5128-10KI IS61LV5128-10T IS61LV5128-10TI IS61LV5128-12

ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61LV5128-10K IS61LV5128-10KI IS61LV5128-10T IS61LV5128-10TI IS61LV5128-12B IS61LV5128-12BI IS61LV5128-12K IS61LV5128-12KI IS61LV5128-12T IS61LV5128-12TI IS61LV5128-15B 61LV5128 IS61LV5128 IS61LV5128-15BI IS61LV5128-15T IS61LV5128-15TI IS61LV5128-15K IS61LV5128-15KI
OCR Text ... a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 6 Integrated Silicon Solution, Inc. -- 1-800-379-4774 Rev. B 07/16/01 IS61LV5128 WRITE CYCLE...
Description IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36

File Size 71.65K  /  9 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ...d not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during rea...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...d not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during rea...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

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