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d.p.-d.t Datasheet PDF File

For d.p.-d.t Found Datasheets File :: 174093 Search Time::3.375ms
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				Fairchild Semiconductor
Part No.	HMA2701 HMA124 HMAA2705 HMA121
OCR Text	...2 D0 E A0 W1 B0 F W d P 2.54 Pitch Description Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Dia. Sprocket Hole Location Pocket Location Symbol W t P 0 D0 E F P 2 Pocket Pitch Pocket Dimension P A0 B0 K0 Pocket...
Description	FULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS
File Size	491.93K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...d G HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 12m Description Advanced HEXFET(R) Power MOSFETs from International Rectifier ...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 50A, VGS = 0V --- 73 110 ns TJ = 25C, IF = 50A ---...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...tching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12m G S ID = 84A Description Advanced HEXFET(R) Power MOSFETs from Inter...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 50A, VGS = 0V --- 73 110 ns TJ = 25C, IF = 50A ---...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... l l HEXFET(R) Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11m G S Advanced HEXFET (R) Power MOSFETs from Internat...P ak T O -26 2 IRF1010NS IRF1010NL Absolute Maximum Ratings Parameter ID @ TC = 25C ID...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...tching Fully Avalanche Rated D VDSS = 55V RDS(on) = 11m G S ID = 85A Description Advanced HEXFET(R) Power MOSFETs from Inter...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 69 100 ns TJ = 25C, IF = 43A ---...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	D Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Al...p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 25V di/dt = 100A/s e ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rate...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 60A, VGS = 0V --- 74 110 ns TJ = 25C, IF = 60A ---...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A -...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	D Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching R...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 104A, VGS = 0V --- 66 100 ns TJ = 25C, IF = 104A --...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...tching Fully Avalanche Rated D VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International...P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

For d.p.-d.t Found Datasheets File :: 174093 Search Time::3.375ms
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