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For diod Found Datasheets File :: 977 Search Time::11.562ms
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				Vishay Siliconix
Part No.	BB824-2-V-GH BB824-3-V-GH BB824-V-GH
OCR Text	...ange of v r = (2 v to 8 v) for diod es 4 taped in sequence th e max. deviation is 3 % 18108 12 3 parts table part type differentiation ordering code type marking remarks bb824-2-v-gh v rrm = 20 v, c d2 = 42.5 pf to 43.8 pf bb824-2-v-gh-0...
Description	Dual Varicap diode
File Size	72.19K / 3 Page	View it Online	Download Datasheet

				Mean Well Enterprises Co., Ltd.
Part No.	MSP-300-12 MSP-300-24 MSP-300-36 MSP-300-3.3 MSP-300-15 MSP-300-48 MSP-300-5 MSP-300-7.5
OCR Text	... ; 95 5 for others (tsw2: power diod j? j j? j detect on heatsink of e) 90 5 (tsw1: j ? j detect on heatsink of power transistor) ansi/aami es60601-1, iec60601-1 approved compliance to en55011 (cispr11) class b, en61000-3-2,-3 compliance to...
Description	300W Single Output Medical Type
File Size	135.64K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PSC71K
OCR Text	...f rated voltage id eal diod es square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 58w irg4psc71k 4 www.irf.com fig. 6 ...
Description	600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
File Size	157.53K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCH47N60N1112
OCR Text	... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fch47n60n fch47n60n to-247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown volt...
Description	N-Channel MOSFET
File Size	282.56K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCH47N60NF
OCR Text	... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fch47n60nf fch47n60nf to-247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown vo...
Description	N-Channel MOSFET, FRFET
File Size	249.89K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	CMS16
OCR Text	...racteri stics compared to other diod es. sbds can cause thermal runaway when used under high temperature or high volt age conditions. be sure to take forward and reverse loss into consideration during design. 2) the absolute maximum r...
Description	Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications
File Size	170.56K / 6 Page	View it Online	Download Datasheet

				Mean Well Enterprises Co., Ltd. Mean Well Enterprises C...
Part No.	HRPG-30011 HRPG-300-12
OCR Text	... ; 95 5 for others (tsw2: power diod detect on heatsink of e) 90 5 (tsw1: detect on heatsink of power transistor) ul60950-1, tuv en60950-1 approved compliance to en55022 (cispr22) class b, en61000-3-2,-3 compliance to en61000-4-2,3,4,5,6,8,...
Description	300W Single Output with PFC Function
File Size	294.48K / 4 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI4618DY-T1-E3 SI4618DY-T1-GE3 SI4618DY09
OCR Text	...s 2 n-channel 2 mosfet schottky diod e g 1 n-channel 1 mosfet s 1 /d 2 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 125 c/w (channel-1) and 100 c/w (chan...
Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky diode Dual N-Channel 30-V (D-S) MOSFET with Schottky diode
File Size	275.08K / 15 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF19N40 FDP19N40
OCR Text	... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp19n40 fdp19n40 to-220 - - 50 fdpf19n40 fdpf19n40 to-220f - - 50 symbol parameter test conditions min. typ. max. units bv d...
Description	N-Channel MOSFET 400V, 19A, 0.24Ω
File Size	253.97K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SQJ401EP
OCR Text	...-to-source voltage source-drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j...
Description	Automotive P-Channel 12 V (D-S) 175 °C MOSFET
File Size	178.40K / 10 Page	View it Online	Download Datasheet

For diod Found Datasheets File :: 977 Search Time::11.562ms
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