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Mitsubishi Electric Corporation
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Part No. |
CR8PM-12 CR8PM-8
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Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI semiconductor (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
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File Size |
71.52K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
CR6PM-12 CR6PM-8
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Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI semiconductor (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
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File Size |
76.68K /
5 Page |
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it Online |
Download Datasheet
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Hynix semiconductor, Inc.
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Part No. |
GMS81C2112 GMS81C2112K GMS81C2112Q GMS81C2120K GMS87C2120K
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Description |
HYNIX semiconductor 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP40 HYNIX semiconductor 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP42 HYNIX semiconductor 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP44 HYNIX semiconductor 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP42
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File Size |
965.51K /
107 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric semiconductor] Mitsubishi Electric Corporation
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Part No. |
MGF0911A 0911A
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Description |
From old datasheet system MITSUBISHI semiconductor (GaAs FET) L, S BAND POWER GaAs FET
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File Size |
21.84K /
3 Page |
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it Online |
Download Datasheet
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HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO...
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Part No. |
4120A 4120B 4120C
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Description |
Small size, heavy contact load, capable of standing strong current of 45A at 14VDC. Both european 11mm pole distance and American 8mm pole distance available
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File Size |
895.04K /
1 Page |
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it Online |
Download Datasheet
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Price and Availability
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