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W90P710 1908X35W 5011B 11N60CFD MTDK5S6R MTDK5S6R AD571 10150
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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...C VDS = -80V 32 VGS = -10V, See fig. 6 and 13 --- VDD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1....
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...C VDS = -80V 51 VGS = -10V, See fig. 6 and 13 --- VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See fig. 5 Source-Drain R...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...C VDS = -80V 51 VGS = -10V, See fig. 6 and 13 --- VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...ax. junction temperature. ( See fig. 23 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.3A, di/dt 84A/s, VDD V(BR)DSS , TJ 150C N-Channel Starting TJ = 25C, L = ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... = -10V 1.1 2.2 VGS = -10V, See fig. 10 9.7 19 VDD = -10V 14 28 ID = -1.0A ns 20 40 RG = 6.0 6.9 14 RD = 10 190 --- VGS = 0V 120 --- pF VDS = -15V 61 --- = 1.0MHz, See fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t ...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...nC VDS = 10V 3.5 VGS = 10V, See fig. 10 12 VDD = 10V 18 ID = 1.0A ns 26 RG = 6.0 6.0 RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz, See fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuo...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ... VDS = -48V 5.1 VGS = -10V, See fig. 6 and 13 --- VDD = -30V --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, See fig. 10 Between lead, nH 7.5 --- and center of die contact 270 --- VGS = 0V 170 --- pF VDS = -25V 31 --- = 1.0MHz, See fig. 5 ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ... = -48V --- 11 V GS = -10V, See fig. 6 and 13 13 --- VDD = -30V 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, See fig. 10 Between lead, nH 7.5 --- and center of die contact 570 --- VGS = 0V 360 --- pF VDS = -25V 65 --- = 1.0MHz, Se...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...C VDS = -44V 10 VGS = -10V, See fig. 6 and 13 --- VDD = -28V --- ID = -7.2A ns --- RG = 24 --- RD = 3.7, See fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- pF VDS = -25V 92 --- = 1.0MHz, See fig. 5 Sou...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... VDS = -44V 10 V GS = -10V, See fig. 6 and 13 --- VDD = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1....
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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