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Nippon Chemi-con, Corp.
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| Part No. |
RZ200VG161U25.4X64LL RZ200VG181U25.4X64LL
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| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 200 V, 160 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 200 V, 180 uF, THROUGH HOLE MOUNT RADIAL LEADED
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| File Size |
807.31K /
5 Page |
 View
it Online |
Download Datasheet
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Texas Instruments |
| Part No. |
INA148UA/2K5
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| Description |
+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
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| Tech specs |
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Official Product Page
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Texas Instruments |
| Part No. |
INA148UA/2K5G4
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| Description |
+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
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| Tech specs |
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Official Product Page
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Texas Instruments |
| Part No. |
INA148UA
|
| Description |
+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
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| Tech specs |
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Official Product Page
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Texas Instruments |
| Part No. |
INA148UAG4
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| Description |
+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
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| Tech specs |
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Official Product Page
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GSI Technology, Inc.
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| Part No. |
GS8640E36T-167IV GS8640E36T-200IV GS8640E32T-167IV GS8640E18T-167IV GS8640E36GT-167IV GS8640E18T-250IV GS8640E32T-250IV GS8640E32GT-250V GS8640E32GT-200V
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| Description |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 7.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 6.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100
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| File Size |
594.30K /
23 Page |
View
it Online |
Download Datasheet |
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Texas Instruments |
| Part No. |
LMG1210RVRT
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| Description |
200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time 19-WQFN -40 to 125
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| Tech specs |
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Official Product Page
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GSI Technology, Inc.
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| Part No. |
GS8160Z36BGT-250IV GS8160Z18BGT-200IV GS8160Z18BT-200IV GS8160Z36BGT-150IV GS8160Z36BT-150IV GS8160Z18BT-150IV GS8160Z18BGT-250IV GS8160Z36BT-250IV GS8160Z36BGT-200IV GS8160Z18BT-250IV GS8160Z36BT-250V GS8160Z36BT-200V GS8160Z36BGT-250V GS8160Z36BT-150V GS8160Z36BGT-200V GS8160Z36BGT-150V 60Z18BGT-150V 60Z18BGT-150IV
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| Description |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PQFP100
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| File Size |
441.74K /
22 Page |
View
it Online |
Download Datasheet |
| |
|
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Texas Instruments |
| Part No. |
LMG1210RVRR
|
| Description |
200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time 19-WQFN -40 to 125
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| Tech specs |
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Official Product Page
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NIC Components, Corp.
|
| Part No. |
NREH3R3M200V6.3X11F NREHR47M350V6.3X11F
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| Description |
Miniature Aluminum Electrolytic Capacitors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 200 V, 3.3 uF, THROUGH HOLE MOUNT
Miniature Aluminum Electrolytic Capacitors CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 0.47 uF, THROUGH HOLE MOUNT
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| File Size |
40.45K /
3 Page |
View
it Online |
Download Datasheet |
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