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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
 View
it Online |
Download Datasheet
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VISHAY TELEFUNKEN
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| Part No. |
BUD7312 BUD7312-SMD
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| Description |
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-251
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
From old datasheet system
Silicon NPN high Voltage Switching Transistor
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| File Size |
125.58K /
8 Page |
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Download Datasheet |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
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| Part No. |
P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE75CA P6KE8.2CA P6KE220A P6KE220CA P6KE110CA P6KE11CA P6KE130CA P6KE13CA P6KE43CA P6KE62CA P6KE91CA P6KE400A P6KE400CA P6KE180CA P6KE350A P6KE16CA P6KE24CA P6KE160CA P6KE440A P6KE440CA P6KE170CA P6KE100A P6KE47CA P6KE33A P6KE18CA P6KE10A P6KE10CA P6KE110A P6KE11A P6KE120A P6KE120CA P6KE12A P6KE12CA P6KE130A P6KE13A P6KE150A P6KE150CA P6KE15A P6KE15CA P6KE160A P6KE16A P6KE170A P6KE180A P6KE18A P6KE200A P6KE200CA P6KE20A P6KE20CA P6KE22A P6KE22CA P6KE24A P6KE250A P6KE250CA P6KE27A P6KE27CA P6KE30A P6KE30CA P6KE33CA P6KE350CA P6KE36A P6KE36CA P6KE39CA P6KE43A P6KE47A P6KE51A P6KE56A P6KE56CA P6KE6.8A P6KE6.8CA P6KE62A P6KE68 P6KE68A P6KE68CA P6KE7.5A P6KE7.5CA P6KE75A P6KE8.2A P6KE82A P6KE82CA P6KE9.1A P6KE91A
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| Description |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
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| File Size |
54.62K /
5 Page |
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Download Datasheet |
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Price and Availability
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