|
|
|
RFMD[RF Micro Devices]
|
Part No. |
RF2334PCBA RF2334
|
OCR Text |
... purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and... |
Description |
GENERAL PURPOSE AMPLIFIER
|
File Size |
40.00K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
MACOM[Tyco Electronics]
|
Part No. |
MAAPSS0003TR MAAPSS0003 MAAPSS0003RTR
|
OCR Text |
...he MD59-0062 Upconverter/Driver IC. The MAAPSS0003 is fabricated using M/A-COM's iHBT HBT process. The process utilizes the InGaP/GaAs materials system for reduced performance variation over temperature, high reliability and improved manufa... |
Description |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER PCS TDMA/CDMA Power Amplifier 1750 - 1910 MHz
|
File Size |
37.50K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
RFMD[RF Micro Devices]
|
Part No. |
RF2043 RF2043PCBA
|
OCR Text |
... purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and... |
Description |
GENERAL PURPOSE AMPLIFIER
|
File Size |
67.35K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|