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  igbt-module Datasheet PDF File

For igbt-module Found Datasheets File :: 5763    Search Time::1.484ms    
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    PP300D060

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. PP300D060
OCR Text ... 300A / 600V TM Half Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be ...module Per FWD 1/2 module 0.055 0.040 75 130 130 21 90 150 150 Min Typ 0.23 Max 0.35 0.70 Units C/W ...
Description POW-R-PAK 300A / 600V Half Bridge IGBT Assembly

File Size 360.00K  /  6 Page

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    PP300D120

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. PP300D120
OCR Text ...300A / 1200V TM Half Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be ...module Per FWD 1/2 module 0.045 0.040 75 130 130 21 90 150 150 Min Typ 0.15 Max 0.25 0.35 Units C/W ...
Description POW-R-PAK 300A / 1200V Half Bridge IGBT Assembly 的POW - r -巴基斯坦300 / 1200伏半桥IGBT的大

File Size 360.53K  /  6 Page

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    FMC7G10US60 7070-12-ZDO

FAIRCHILD[Fairchild Semiconductor]
Bourns Inc.
Fairchild Semiconductor Corporation
Part No. FMC7G10US60 7070-12-ZDO
OCR Text IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for appl...
Description IGBT
Compact & Complex Module
Building Entrance Terminal
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:31.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 31.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency

File Size 650.84K  /  9 Page

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    FMC7G15US60

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FMC7G15US60
OCR Text IGBT FMC7G15US60 Compact & Complex Module General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for appl...
Description Compact & Complex Module

File Size 657.76K  /  9 Page

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    FMC7G20US60

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FMC7G20US60
OCR Text IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for appl...
Description IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA

File Size 649.62K  /  9 Page

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    FMC7G30US60

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FMC7G30US60
OCR Text IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for appl...
Description IGBT
Compact & Complex Module
Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA

File Size 661.47K  /  9 Page

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    FMC7G50US60

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FMC7G50US60
OCR Text IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for appl...
Description IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA

File Size 666.01K  /  9 Page

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    C67076-A2009-A70 BSM25GAL120DN2 025L12N2

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. C67076-A2009-A70 BSM25GAL120DN2 025L12N2
OCR Text IGBT Power Module * Single switch with chopper diode * Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM 25 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; No. of Contacts:18; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug IGBT功率模块(单用菜刀包括快速续流二极管的绝缘金属基板封装二极管开关)
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)
From old datasheet system

File Size 62.21K  /  5 Page

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    IRAMS10UP60A

IRF[International Rectifier]
Part No. IRAMS10UP60A
OCR Text ... Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels Low side I...Module Pin-Out Description P in 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Na m e ...
Description Plug N DriveTM Integrated Power Module for Appliance Motor Drive

File Size 273.70K  /  18 Page

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    M57962L M57962

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M57962L M57962
OCR Text IGBT MODULES Block Diagram 4 VCC 14 185 Timer and Reset Circuit Interface 5 VOUT Detect Circuit 1 Detect Pin Hybrid Integrated Circuit ...Module 400A, 1200V IGBT "L-H" Propagation Time "L-H" Rise Time "H-L" Propagation Time "H-L" Rise Tim...
Description HYBRID IC FOR DRIVING IGBT MODULES
From old datasheet system

File Size 23.90K  /  2 Page

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For igbt-module Found Datasheets File :: 5763    Search Time::1.484ms    
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