lb 13.6 pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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lb 13.6 Datasheet PDF File

For lb 13.6 Found Datasheets File :: 7365 Search Time::2.578ms
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				PHILIPS[Philips Semiconductors]
Part No.	BU2515AF
OCR Text	...H; Cfb = 4 nF; IB(end) =0.65 A; lb = 1.5 H; -VBB = -4 V; -IBM = 2.7 A TYP. MAX. UNIT 2.2 0.2 3.0 0.4 s s TRANSISTOR IC DIODE ...13. Reverse bias safe operating area. Tj Tjmax 10 Ic(sat) (A) 8 7 BU2515AF/AX 1 0.5 ...
Description	Silicon Diffused Power Transistor
File Size	62.88K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	BU2515AX
OCR Text	...H; Cfb = 4 nF; IB(end) =0.65 A; lb = 1.5 H; -VBB = -4 V; -IBM = 2.7 A TYP. MAX. UNIT 2.2 0.2 3.0 0.4 s s TRANSISTOR IC DIODE ...13. Reverse bias safe operating area. Tj Tjmax 10 Ic(sat) (A) 8 7 BU2515AF/AX 1 0.5 ...
Description	Silicon Diffused Power Transistor
File Size	65.06K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	BU2515DF
OCR Text	...; Cfb = 4 nF; IB(end) = 0.65 A; lb = 1.5 H; -VBB = -4 V; -IBM = 2.7 A 2.2 0.2 17 360 3.0 0.4 s s V ns TYP. MAX. UNIT 2 Measured with half...13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; lb = 0.3 - 2 H; CFB ...
Description	Silicon Diffused Power Transistor
File Size	66.93K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2515DX
OCR Text	...; Cfb = 4 nF; IB(end) = 0.65 A; lb = 1.5 H; -VBB = -4 V; -IBM = 2.7 A 2.2 0.2 17 360 3.0 0.4 s s V ns TYP. MAX. UNIT 2 Measured with half...13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; lb = 0.3 - 2 H; CFB ...
Description	Silicon Diffused Power Transistor
File Size	69.05K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2520AF
OCR Text	...; Cfb = 9 nF; IB(end) = 0.85 A; lb = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A / s) ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; lb =...13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 1...
Description	Silicon Diffused Power Transistor
File Size	79.05K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2520AW
OCR Text	...; Cfb = 9 nF; IB(end) = 0.85 A; lb = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A/s) ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; lb = 5...13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 1...
Description	Silicon Diffused Power Transistor
File Size	81.55K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2520AX
OCR Text	...; Cfb = 9 nF; IB(end) = 0.85 A; lb = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A / s) ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; lb =...13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 1...
Description	Silicon Diffused Power Transistor
File Size	81.12K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BU2520A
OCR Text	...; Cfb = 9 nF; IB(end) = 0.85 A; lb = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A/s) ICM = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; lb = 5.3...13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 1...
Description	Silicon Diffused Power Transistor
File Size	56.16K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BU2520DF
OCR Text	...; Cfb = 19 nF; IB(end) = 1.0 A; lb = 5.3 H; -VBB = 4 V; (-dIB/dt = 0.8 A / s) 4.5 0.35 5.5 0.5 s s TYP. 115 MAX. UNIT pF 2 Measured with ...13. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp...
Description	Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR
File Size	68.50K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BU2520DW
OCR Text	...; Cfb = 19 nF; IB(end) = 1.0 A; lb = 5.3 H; -VBB = 4 V; (-dIB/dt = 0.8 A / s) 4.5 0.35 5.5 0.5 s s TYP. 115 MAX. UNIT pF TRANSISTOR IC DI...13. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp...
Description	Silicon Diffused Power Transistor(纭???ｅ?????朵?绠? Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
File Size	71.48K / 6 Page	View it Online	Download Datasheet

For lb 13.6 Found Datasheets File :: 7365 Search Time::2.578ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |