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MICROSEMI CORP
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| Part No. |
BR150-1040C1-36V BR150-1040B1-36V BR150-115B1-12V BR150-280B1-18V BR150-115B2-12V
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| Description |
POWER/SIGNAL RELAY, 4PDT, MOMENTARY, 0.035A (COIL), 36VDC (COIL), 1260mW (COIL), 2A (CONTACT), 28VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
POWER/SIGNAL RELAY, 4PDT, MOMENTARY, 0.035A (COIL), 36VDC (COIL), 1260mW (COIL), 2A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
POWER/SIGNAL RELAY, 4PDT, MOMENTARY, 0.104A (COIL), 12VDC (COIL), 1248mW (COIL), 2A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
POWER/SIGNAL RELAY, 4PDT, MOMENTARY, 0.064A (COIL), 18VDC (COIL), 1152mW (COIL), 2A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
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| File Size |
282.64K /
2 Page |
 View
it Online |
Download Datasheet
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW030Z120C
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| Description |
N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW045Z120C
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| Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.062 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
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| Part No. |
BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2
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| Description |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
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| File Size |
72.63K /
1 Page |
View
it Online |
Download Datasheet |
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015Z65C
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| Description |
N-ch SiC MOSFET, 650 V, 100 A, 0.022 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW140Z120C
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| Description |
N-ch SiC MOSFET, 1200 V, 20 A, 0.191 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW060Z120C
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| Description |
N-ch SiC MOSFET, 1200 V, 36 A, 0.082 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW107Z65C
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| Description |
N-ch SiC MOSFET, 650 V, 20 A, 0.152 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015Z120C
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| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.021 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW048Z65C
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| Description |
N-ch SiC MOSFET, 650 V, 40 A, 0.069 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW027Z65C
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| Description |
N-ch SiC MOSFET, 650 V, 58 A, 0.038 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW083Z65C
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| Description |
N-ch SiC MOSFET, 650 V, 30 A, 0.118 Ω@18V, TO-247-4L(X)
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| Tech specs |
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Official Product Page
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Price and Availability
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(CHINA HK & SZ)
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| Part: LEBB-S14H |
| Maker: LG |
| Pack: O6O3 |
| Stock: 7060 |
| Unit price
for : |
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50: $0.06 |
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100: $0.06 |
| 1000:
$0.05 |
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