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  mil-std-202 Datasheet PDF File

For mil-std-202 Found Datasheets File :: 22987    Search Time::1.235ms    
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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 , THERMAL I...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... MAX UNIT C/W 0.14 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 0.81mH, R = 25W, Peak I = 89A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2LL
OCR Text ... MAX UNIT C/W 0.14 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 0.85mH, R = 25W, Peak I = 87A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 50.41K  /  2 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ... MAX UNIT C/W 0.15 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.08mH, R = 25W, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ... MAX UNIT C/W 0.15 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.08mH, R = 25W, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 33.79K  /  2 Page

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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ... MAX UNIT C/W 0.18 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.34mH, R = 25W, Peak I = 67A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.95K  /  2 Page

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    APT8011JLL APT8011

ADPOW[Advanced Power Technology]
Part No. APT8011JLL APT8011
OCR Text ...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.77mH, R = 25W, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.67K  /  2 Page

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    APT8011 APT8011JFLL

ADPOW[Advanced Power Technology]
Part No. APT8011 APT8011JFLL
OCR Text ...AX UNIT C/W 0.18 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.77mH, R = 25W, Peak I = 51A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit r...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.29K  /  2 Page

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    APT8014JFLL

Advanced Power Technology
Part No. APT8014JFLL
OCR Text ...AX UNIT C/W 0.21 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.63mH, R = 25W, Peak I = 42A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit r...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.42K  /  2 Page

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    APT8014JLL

Advanced Power Technology
Part No. APT8014JLL
OCR Text ...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.63mH, R = 25W, Peak I = 42A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.73K  /  2 Page

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