| |
|
 |
Roithner LaserTechnik G...
|
| Part No. |
LED36-SMD5R
|
| OCR Text |
...es grown on inas substrates by mocvd. inassb is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for good electron confinement. led36-smd5r has a stable ouput power and a lifetime more then 8000... |
| Description |
Mid-Infrared Light Emitting Diode
|
| File Size |
182.40K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Roithner LaserTechnik G...
|
| Part No. |
LED36-SMD5
|
| OCR Text |
...es grown on inas substrates by mocvd. inassb is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for good electron confinement. led36-smd5 has a stable ouput power and a lifetime more then 80000... |
| Description |
Mid-Infrared Light Emitting Diode
|
| File Size |
181.17K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Roithner LaserTechnik G...
|
| Part No. |
LED36-TEC-PR
|
| OCR Text |
...es grown on inas substrates by mocvd. inassb is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for good electron confinement. led36-smd3 has a stable ouput power and a lifetime more then 80000... |
| Description |
Mid-Infrared Light Emitting Diode
|
| File Size |
218.69K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Roithner LaserTechnik G...
|
| Part No. |
LED36-TEC
|
| OCR Text |
...es grown on inas substrates by mocvd. inassb is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for good electron confinement. led36-smd3 has a stable ouput power and a lifetime more then 80000... |
| Description |
Mid-Infrared Light Emitting Diode
|
| File Size |
219.80K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Roithner LaserTechnik G...
|
| Part No. |
LDM980-25LT
|
| OCR Text |
...r module containing a 980 nm mocvd grown laser diode with quantum well structures. it is an ideal light source for bar code reader, measurement and medi c al applications. maximum ratings parameter symbol valu... |
| Description |
infrared laser module
|
| File Size |
357.38K /
1 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
ML7XX11
|
| OCR Text |
... fsbh** structure fabricated by mocvd process * multiple quantum well ** facet selective - growth buried hetero structure application long - distance digital transmission system *** specification note type operation temperature rang... |
| Description |
Optoelectronics - Discrete Products
|
| File Size |
176.69K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Roithner LaserTechnik G...
|
| Part No. |
LED20-PR
|
| OCR Text |
...grown on gasb substrates by mocvd. ga inassb is used in the active layer. wide band gap solid solutio ns algaa ssb are used for good electron confinement. led 20- pr has a stable ouput power and a lifetime more then 80000 hours. ... |
| Description |
Mid-Infrared Light Emitting Diode
|
| File Size |
152.44K /
3 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
