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  n-channel insulated gate bipol Datasheet PDF File

For n-channel insulated gate bipol Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    NTE3300

NTE Electronics
Part No. NTE3300
Description insulated gate bipolar Transistor n-channel Enhancement Mode / High Speed Switch
insulated gate bipolar Transistor n-channel Enhancement Mode, High Speed Switch

File Size 18.87K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE3320
Description insulated gate bipolar Transistor n-channel Enhancement Mode, High Speed Switch

File Size 20.12K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE3312 NTE3311
Description insulated gate bipolar Transistor n-channel Enhancement Mode, High Speed Switch

File Size 18.10K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE3310
Description insulated gate bipolar Transistor n-channel Enhancement Mode, High Speed Switch

File Size 18.12K  /  2 Page

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    IRGP420U GP420U

International Rectifier, Corp.
Part No. IRGP420U GP420U
Description insulated gate bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
insulated gate bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)

File Size 108.14K  /  7 Page

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    IRG4PC30W IRG4PC30WPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PC30W IRG4PC30WPBF
Description insulated gate bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管
insulated gate bipolAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package

File Size 122.11K  /  8 Page

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    TOSHIBA
Part No. GT60M104
Description insulated gate bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 263.33K  /  5 Page

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    TOSHIBA
Part No. GT60M302
Description insulated gate bipolAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 278.94K  /  6 Page

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    TOSHIBA
Part No. GT60M303
Description insulated gate bipolAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 265.23K  /  6 Page

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    TOSHIBA
Part No. GT10Q101
Description insulated gate bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

File Size 152.79K  /  6 Page

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For n-channel insulated gate bipol Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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