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| Part No. |
GRS-625/PF-CH-122-T
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| OCR Text |
...e type part number commscope 50 ohm grs-625/50-ch-122-t times fiber 50 ohm grs-625/50-ch-122-t commscope power feeder? grs-625/pf-ch-122-t times fiber p-22 grs-625/pf-ch-122-t times fiber p-20 grs-625/20-ch-122-t stripping/coring tool cable... |
| Description |
CABLE TERMINATED, MALE, RF CONNECTOR
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| File Size |
38.61K /
1 Page |
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IPS
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| Part No. |
FTZ127
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| OCR Text |
...ion available available rdson (ohm) current (a) voltage (v) type part number free datasheet http:///
confidential empower the world emp...20 600 n-channel enhancement ftw20n60a now to-220 0.75 10 600 n-channel enhancement fta10n60c now to... |
| Description |
N-Channel Enhancement
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| File Size |
74.29K /
6 Page |
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SamHop Microelectronics...
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| Part No. |
SP8009
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| OCR Text |
... i d =12a v gs =10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =12a...20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.5 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
77.42K /
6 Page |
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SamHop Microelectronics
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| Part No. |
SP8009E
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| OCR Text |
... i d =12a v gs =10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =12a...20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.5 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.79K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
SP8009EL
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| OCR Text |
... i d =12a v gs =10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =12a...20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.6 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.2... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
110.84K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
SP8008
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| OCR Text |
... i d =14a v gs =10v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =14a...20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =1.4 v 30 24 18 12 6 0 0 0.5 1 1.5 2 2.5 -55 c tj=100 c 25... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.93K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
SP8007
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| OCR Text |
... 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =13.5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds ...20 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source cha... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
112.50K /
8 Page |
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SamHop Microelectronics...
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| Part No. |
SP8006
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| OCR Text |
... 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =6.25a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds ...20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rate... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.81K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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