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INTERSIL[Intersil Corporation]
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| Part No. |
FRL430H FRL430R FRL430D FN3234
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| OCR Text |
to-205af
Features
* 2A, 500V, RDS(on) = 2.50 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Pe... |
| Description |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFETs
2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
46.72K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF8130 IRHF3130 IRHF4130 IRHF7130 JANSF2N7261 JANSG2N7261 JANSH2N7261 JANSR2N7261
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| OCR Text |
TO-39)
Product Summary
Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K ...205AF(Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St.,... |
| Description |
30V N-Channel PowerTrench MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-205af package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-205af package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-205af package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a to-205af package
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| File Size |
280.83K /
12 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
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| OCR Text |
... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...205AF
DGS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Ha... |
| Description |
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, to-205af
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| File Size |
45.36K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRL234R FN3229 FRL234D FRL234H
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| OCR Text |
to-205af
Features
* 4A, 250V, RDS(on) = 0.700 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance P... |
| Description |
4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFETs
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
47.20K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTX2N6794
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)
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| File Size |
189.48K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6782 JANTX2N6782
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St.... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
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| File Size |
196.13K /
6 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6786 JANTX2N6786
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
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| File Size |
190.65K /
6 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6788 2N6788 JANTX2N6788
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)
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| File Size |
196.23K /
6 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6792 JANTX2N6792
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)
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| File Size |
197.10K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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