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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED GATE BIPOLAR transistor SILICON N CHANNEL igbt HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR transistor SILICON N CHANNEL igbt
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File Size |
257.03K /
6 Page |
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it Online |
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![IRG4PC50U IRG4PC50U-E](Maker_logo/international_rectifier.GIF)
IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRG4PC50U IRG4PC50U-E
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Description |
55 A, 600 V, n-chanNEL igbt, TO-247AD 55 A, 600 V, n-chanNEL igbt, TO-247AC 600V UltraFast 8-60 kHz Discrete igbt in a TO-247AC package INSULATED GATE BIPOLAR transistor(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)
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File Size |
146.22K /
8 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED GATE BIPOLAR transistor SILICON N CHANNEL igbt HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar transistor Silicon N Channel igbt
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File Size |
167.37K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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