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  vdss Datasheet PDF File

For vdss Found Datasheets File :: 18869    Search Time::5.047ms    
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    2SJ222

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ222
OCR Text ... 1% 2. Value at TC = 25C Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -100 20 -20 -80 -20 35 150 -55 to +150 Unit V V A A A W C C 2 2SJ222 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown...
Description Silicon P-Channel MOS FET

File Size 33.29K  /  6 Page

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    2SJ243 D11215EJ1V0DS00

NEC Corp.
Part No. 2SJ243 D11215EJ1V0DS00
OCR Text ...C) Drain Current (Pulse) SYMBOL vdss VGSS ID(DC) ID(pulse) PW 10 ms Duty cycle 50 % 3.0 cm2 x 0.64 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -30 7 100 200 UNIT V A mA mA Total Power Dissipation Channel Temperatu...
Description From old datasheet system
P-CHANNEL MOS FET FOR SWITCHING

File Size 58.34K  /  6 Page

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    2SJ244

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SJ244
OCR Text ...ture Storage temperature Symbol vdss VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings -12 7 2 4 1 150 -55 to +150 Unit V V A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Marki...
Description Silicon P-Channel MOS FET

File Size 44.24K  /  8 Page

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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ... 1% 2. Value at TC = 25C Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -100 20 -8 -32 -8 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate t...
Description Silicon P-Channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ248

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ248
OCR Text ... 1% 2. Value at TC = 25C Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -100 20 -8 -32 -8 25 150 -55 to +150 Unit V V A A A W C C 2 2SJ248 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown v...
Description Silicon P-Channel MOS FET

File Size 32.65K  /  6 Page

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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ...ture Storage temperature Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -60 20 -1 -4 -1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7 m...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ317

HITACHI[Hitachi Semiconductor]
Part No. 2SJ317
OCR Text ...ture Storage temperature Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -12 -7 2 4 2 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm...
Description Silicon P-Channel MOS FET

File Size 37.77K  /  8 Page

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    2SJ319 2SJ319L 2SJ319S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ319 2SJ319L 2SJ319S
OCR Text ... 1% 2. Value at TC = 25C Symbol vdss VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -200 20 -3 -12 -3 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate t...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 44.83K  /  9 Page

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    2SJ339

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SJ339
OCR Text ...ture Storage Temperature Symbol vdss VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions 2.4 Ratings -60 20 -25 -100 2 40 150 -55 to +150 Unit V V A A ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.40K  /  4 Page

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    2SJ340

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ340
OCR Text ...ture Storage Temperature Symbol vdss VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -60 20 -30 -120 1.65 70 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to...
Description Ultrahigh-Speed Switching Applications 超高速开关应

File Size 40.73K  /  4 Page

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For vdss Found Datasheets File :: 18869    Search Time::5.047ms    
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