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For vec Found Datasheets File :: 1730 Search Time::1.343ms
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				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	SFH313FA SFH313 Q62702-P1667 SFH313FA-3 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754 SFH313-2 SFH313-3 SFH313FA-2
OCR Text	... TS 300 C VCE IC ICS vec Ptot RthJA 70 50 100 7 200 375 V mA mA V mW K/W Semiconductor Group 2 1997-11-27 SFH 313 SFH 313 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlang...
Description	.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor From old datasheet system
File Size	43.33K / 5 Page	View it Online	Download Datasheet

				Power Innovations International, Inc. Power Innovations Limited POINN[Power Innovations Ltd]
Part No.	TIP152 TIP150 TIP151
OCR Text	...E = VCE = 7A 5V 5V V BE(sat) vec hfe \|hfe\| Cob VCB = 10 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, sepa...
Description	NPN SILICON POWER DARLINGTONS
File Size	187.50K / 7 Page	View it Online	Download Datasheet

				Power Innovations International, Inc. Power Innovations Limited
Part No.	BDX34 BDX34D BDX34A BDX34B BDX34C
OCR Text	...ur-emetteur IB = IB = IB = IB = vec Courant direct dans la diode parallele IE = -5 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -8 mA -8 mA -6 mA -6 mA -6 mA -8 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 ...
Description	PNP SILICON POWER DARLINGTONS EMITTER IR 850NM T1 3/4 Transistor de puissance PNP darlington
File Size	89.81K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM50DY-12H
OCR Text	... ICES IGES V GE(th) VCE(sat) QG vec Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V IC = 50A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 50A, VGE = 15V...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
File Size	47.80K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	PS21254 PS21254-E
OCR Text	... Collector Cutoff Current ICES vec VCE(sat) ton trr tC(on) toff tC(off) VCE = VCES, Tj = 25C VCE = VCES, Tj = 125C Diode Forward Voltage Collector-Emitter Saturation Voltage Tj = 25C, -IC = 15A, VCIN = 5V IC = 15A, Tj = 25C, VD = VDB = 15V...
Description	IntellimodModule Dual-In-Line Intelligent Power Module (15 Amperes/600 Volts) Intellimod Module Dual-In-Line Intelligent Power Module (15 Amperes/600 Volts) Intellimod⑩ Module Dual-In-Line Intelligent Power Module (15 Amperes/600 Volts)
File Size	81.74K / 6 Page	View it Online	Download Datasheet

				Semikron
Part No.	SKM400GA128D
OCR Text	...nder following conditions: VF = vec IF = 300 A; V GE = 0 V; Tj = 25 (125) C VT(TO) Tj = 25 (125) C rT Tj = 25 (125) C I RRM IF = 300 A; Tj = 125 C Q rr di/dt = 5200 A/s Err VGE = 0 V FWD under following conditions: VF = vec IF = A; V GE = 0...
Description	IGBT Power Module
File Size	58.35K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	CM200DY-12H
OCR Text	...l ICES IGES VGE(th) VCE(sat) QG vec Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V IC = 200A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 200A, VGE =...
Description	IGBT Modules: 600V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	46.37K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors Mitsubishi Electric Semiconductor
Part No.	CM200DY-12NF
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description	HIGH POWER SWITCHING USE
File Size	91.88K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DY-24A
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V...
Description	HIGH POWER SWITCHING USE
File Size	44.58K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM20MD-12H
OCR Text	...elay time tf Turn-off fall time vec (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. -- 4.5 -- -- -- -- -- -- --...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	182.56K / 5 Page	View it Online	Download Datasheet

For vec Found Datasheets File :: 1730 Search Time::1.343ms
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