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w fet Datasheet PDF File

For w fet Found Datasheets File :: 20192 Search Time::1.078ms
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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2004-01L 2SK2004-01S
OCR Text	...0 150 -55 ~ +150 Unit V V A A V w C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Dra...fet 1000V 3,6 2SK2004-01L,S FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical...
Description	N-channel MOS-fet
File Size	218.14K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK2007
OCR Text	...0 -55 to +150 Unit V V A A A w C C 2 2SK2007 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 30 -- -...
Description	Silicon N-Channel MOS fet
File Size	47.39K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK2008
OCR Text	...0 -55 to +150 Unit V V A A A w C C 2 2SK2008 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 30 -- -...
Description	Silicon N Channel MOS fet Silicon N-Channel MOS fet
File Size	32.77K / 6 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2
OCR Text	... Tstg 2.0 150 -55 to +150 w C C Document No. D11233EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SK2157 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-Off Current Gate Leakage Current...
Description	N-CHANNEL MOS fet FOR HIGH-SPEED SwITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
File Size	57.30K / 6 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	2SK2159 D11235EJ2V0DS00
OCR Text	... Tstg 2.0 150 -55 to +150 w C C Document No. D11235EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan (c) 1996 2SK2159 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage ...
Description	N-CHANNEL MOS fet FOR HIGH-SPEED SwITCHING N沟道场效应晶体管的高速开 From old datasheet system
File Size	59.10K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SK215 2SK214 2SK213 2SK216
OCR Text	...45 to +150 Unit V V mA mA w w C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage F...
Description	Silicon N-Channel MOS fet 硅N沟道场效应晶体管 Silicon N Channel MOS fet
File Size	32.89K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK2383
OCR Text	...3 5 1 2 3 A A mJ w C C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 2mH, IL = 13A, 1 pulse s E...
Description	Silicon N-Channel Power F-MOS fet
File Size	42.68K / 3 Page	View it Online	Download Datasheet

				Panasonic, Corp. Panasonic Semiconductor
Part No.	2SK3022
OCR Text	...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshol...
Description	Silicon N-Channel Power F-MOS fet 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSfet
File Size	23.26K / 1 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SK3023
OCR Text	...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 10A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate thresho...
Description	Silicon N-Channel Power F-MOS fet
File Size	23.25K / 1 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SK3024 2SK3024TENTATIVE
OCR Text	...a = 25C Internal Connection w C C S G D L = 0.1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate thresho...
Description	Silicon N-Channel Power F-MOS fet
File Size	23.22K / 1 Page	View it Online	Download Datasheet

For w fet Found Datasheets File :: 20192 Search Time::1.078ms
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