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  175oc Datasheet PDF File

For 175oc Found Datasheets File :: 2104    Search Time::4.156ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9R1560S3S
OCR Text .... . . . . . . . . . . . . . . . 175oc * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling ...
Description 15A, 600V Stealth⑩ Diode
15A 600V Stealth Diode

File Size 129.76K  /  7 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL
OCR Text ...mp * ESD Gate Protection * TJ = 175oc * Ignition Energy Capable Packages JEDEC TO-220AB E C G COLLECTOR (FLANGE) JEDEC TO-263AB Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used a...
Description 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA
20A 360V N-Channel Logic Level Voltage Clamping IGBTs
N/A

File Size 222.95K  /  7 Page

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    ISL9K860P3

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9K860P3
OCR Text ...e . . . . . . . . . . . . . . . 175oc * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Moto...
Description 8A, 600V Stealth?/a> Dual Diode
8A, 600V Stealth Dual Diode
8A/ 600V Stealth Dual Diode
8A, 600V Stealth⑩ Dual Diode
8A, 600V StealthDual Diode

File Size 115.00K  /  6 Page

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    IRF140

HARRIS SEMICONDUCTOR
Intersil Corporation
Part No. IRF140
OCR Text ... 80s PULSE TEST 10 1 TJ = 175oc TJ = 25oC 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 1.0 80s PULSE TES...
Description 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET

File Size 55.34K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S
OCR Text .... . . . . . . . . . . . . . . . 175oc * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Di...
Description 4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode

File Size 101.47K  /  6 Page

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    FDD8778 FDU8778-F071 FDU8778

FAIRCHILD[Fairchild Semiconductor]
Part No. FDD8778 FDU8778-F071 FDU8778
OCR Text ... CYCLE = 0.5%MAX 40 30 TJ = 175oc 20 10 0 3.0 TJ = 25oC -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Tempera...
Description N-CHANNEL POWERTRENCH MOSFET 25V, 35A, 14MOHM

File Size 344.11K  /  6 Page

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    SCS205KG

ROHM
Part No. SCS205KG
OCR Text ... 2.0 2.5 ta=125oc pulsed ta=175oc ta=75oc ta=25oc ta= - 25oc fig.1 v f - i f characteristics forward current : i f [a] forward voltage : v f [v] fig.2 v f - i f characteristics forward current : i f ...
Description Switching loss reduced, enabling high-speed switching . (2-pin package)

File Size 147.51K  /  6 Page

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    HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL

INTERSIL[Intersil Corporation]
Part No. HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL
OCR Text .... . .ISCIS at L = 2.3mH, TC = + 175oc . . . . . . . . . . . . . . . . . . . . . .ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . ....
Description 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体)

File Size 109.79K  /  6 Page

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    HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S14N36G3VLT

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S14N36G3VLT
OCR Text ... . . ISCIS at L = 2.3mH, TC = + 175oc . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, T C = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . ....
Description DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs

File Size 221.07K  /  8 Page

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    MUR3020PT MUR3010PT MUR3015PT RURH1520CC RURH1510CC RURH1515CC

ETC
HARRIS[Harris Corporation]
Part No. MUR3020PT MUR3010PT MUR3015PT RURH1520CC RURH1510CC RURH1515CC
OCR Text ... Characteristic (tRR < 30ns) * +175oc Rated Junction Temperature * Reverse Voltage Up to 200V * Avalanche Energy Rated Applications * Switching Power Supply * Power Switching Circuits * General Purpose CATHODE (FLANGE) ANODE1 CATH...
Description 15A, 100V - 200V ULTRAFAST DUAL DIODES

File Size 27.93K  /  3 Page

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