0.0004 pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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0.0004 Datasheet PDF File

For 0.0004 Found Datasheets File :: 9088 Search Time::1.375ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	... * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	... * Low on-resistance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	... * Low on-resistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	... * Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	... * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ531
OCR Text	... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	49.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ533
OCR Text	... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.60K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ534
OCR Text	... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconducto...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.11K / 9 Page	View it Online	Download Datasheet

For 0.0004 Found Datasheets File :: 9088 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |