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SemeLAB
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| Part No. |
2N929
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| OCR Text |
0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.
Bipolar NPN Device. VCEO = 45V
0.48 (0.019) 0.41 (0.016) dia.
IC = 0.03A
All Semelab hermetically sealed products can b... |
| Description |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
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| File Size |
15.92K /
2 Page |
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TOSHIBA
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| Part No. |
2SA1954
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| OCR Text |
...15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -500 mA (max) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current ... |
| Description |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
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| File Size |
147.44K /
6 Page |
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Panasonic
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| Part No. |
2SA2067
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| OCR Text |
...10.00.2 1.00.2
5.00.1
C 1.0 2.250.2
0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emit... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
72.92K /
4 Page |
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it Online |
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SANYO
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| Part No. |
2SA2098
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| OCR Text |
... 2041A
[2SA2098 / 2SC5887]
10.0 3.2 4.5 2.8
Relay drivers, lamp drivers, motor drivers.
Features
* * * *
18.1
16.0
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-sp... |
| Description |
Low-Saturation Voltage Transistors
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| File Size |
44.27K /
6 Page |
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Panasonic
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| Part No. |
2SB1699
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| OCR Text |
...g.
4.50.1 1.60.2 1.50.1
4.0+0.25 -0.20
2.50.1 3
0.40.04
0.40.08 1.50.1 3
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak coll... |
| Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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| File Size |
81.30K /
4 Page |
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it Online |
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SANYO
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| Part No. |
2SC3070
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| OCR Text |
...er saturation voltage (VCE(sat)=0.5V max). * High VEBO (VEBO15V).
EIAJ : SC-51
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cu... |
| Description |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
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| File Size |
96.01K /
4 Page |
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TOSHIBA
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| Part No. |
2SC3268
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| OCR Text |
...ed ceramic substrate of 250 mm 0.8 mmt
Microwave Characteristics (Ta = 25C)
Characteristics Transition frequency Insertion gain Symbol fT iS21ei (1) iS21ei (2) NF (1) NF (2)
2 2
Weight: 0.052 g (typ.)
Test Condition VCE = 10 V, IC... |
| Description |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
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| File Size |
185.36K /
6 Page |
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Panasonic
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| Part No. |
2SC3942
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| OCR Text |
0.70.1
Unit: mm
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
Features
* High collector-emitter voltage (Base open) VCEO * Small collector output capacitance (Common base, input open circuited) Cob * Full-pack package which can be instal... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
78.03K /
4 Page |
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it Online |
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Price and Availability
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