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0.19a Datasheet PDF File

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				Seme LAB
Part No.	IRF250
OCR Text	0.675) 16.64 (0.655) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 7.87 (0.310) 6.99...19A 120A 150W 1.2W/C 200mJ 30A 2 Power Dissipation @ Tcase = 25C Linear Derating Factor Single P...
Description	N-CHANNEL POWER MOSFET
File Size	21.14K / 2 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR Intersil Corporation
Part No.	IRF9140
OCR Text	0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power...19A, -100V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limite...
Description	-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET 19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET
File Size	58.71K / 7 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	IRFI4227PBF
OCR Text	... Max. 30 26 17 100 47 46 18 0.37 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RJC RJA Junction-to-Case f Junc...19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L ...
Description	PDP SWITCH
File Size	295.25K / 8 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
OCR Text	...4 141 159 167 127 116 1270 1.10 0.60 17.2 Unit A A A A A A A2s A2s A2pt V V m t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 19A, TJ = +25C TJ = +175C TJ = +175C Note 1. I2t for time tx = I2 t S tx Thermal-Mechanical Specif...
Description	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
File Size	23.18K / 2 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] TE Connectivity, Ltd. Rohm Co., Ltd.
Part No.	SR230-6 SR230-24 SR60 SR660-9 SR110-12 SR110-15 SR110-18 SR110-2 SR110-20 SR110-28 SR110-48 SR110-5 SR110-6 SR110-9 SR20-12 SR20-15 SR20-18 SR20-2 SR20-20 SR20-24 SR20-28 SR20-48 SR20-5 SR20-6 SR20-9 SR230-12 SR230-15 SR230-18 SR230-2 SR230-20 SR230-28 SR230-48 SR230-5 SR230-9 SR330-12 SR330-15 SR330-18 SR330-2 SR330-20 SR330-24 SR330-28 SR330-48 SR330-5 SR330-6 SR330-9 SR35-12 SR35-15 SR35-18 SR35-2 SR35-20 SR35-24 SR35-28 SR35-48 SR35-5 SR35-6 SR35-9 SR60-12 SR60-15 SR60-18 SR60-2 SR60-20 SR60-24 SR60-28 SR60-48 SR60-5 SR60-6 SR60-9 SR660-12 SR660-15 SR660-18 SR660-2 SR660-20 SR660-24 SR660-28 SR660-48 SR660-5 SR660-6 SR110-24
OCR Text	... : -20 ~ +10%) Line regulation: 0.4% (2V output : 20mV), Load regulation: 0.4% (2V output : 20 mV) 50mV : 2 ~ 6V output, 60mV : 9 ~ 15V outp...19A 6V 117W 13A 9V 120W 10A 12V Nominal Max. Max. UL CSA EN output voltage output current output po...
Description	Single output 20W ~ 660W隆隆 ZTK-89 Single output 20W ~ 660W 单输0660W Single output 20W ~ 660W
File Size	370.39K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFIZ46N
OCR Text	... VDSS = 55V G S RDS(on) = 0.020 ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...19A --- 4.0 V VDS = VGS , ID = 250A --- --- S VDS = 25V, ID = 28A --- 25 VDS = 55V, VGS = 0V A --- ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A) Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 33A条）
File Size	101.04K / 8 Page	View it Online	Download Datasheet

				Semelab
Part No.	IRFN5210
OCR Text	0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ...19A -124A 125W 1.0W/C 340mJ 4.0V/ns -55 to 150C 300C 1.0C/W Notes 1) Pulse Test: Pulse Width 300...
Description	P-Channel Power MOSFET
File Size	20.67K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT10050JLC
OCR Text	0.500 S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lo...19A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description	POWER MOS VI 1000V 19A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	39.19K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10050JVFR
OCR Text	0.500 S G D S POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs....19A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Re...
Description	POWER MOS V 1000V 19A 0.500 Ohm
File Size	70.82K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10050JVR
OCR Text	0.500 S G D S POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tec...19A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 19A 0.500 Ohm
File Size	67.83K / 4 Page	View it Online	Download Datasheet

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