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  0.4v us Datasheet PDF File

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    LA7160M

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LA7160M
OCR Text ...OP16) 16 9 10.1 1.5 0.35 1.27 0.605 0.1 1.8max 1 8 0.15 SANYO : MFP16 Functions * RF VCO * RF mixer * RF buffer * Video clamp * White clip * Audio FM * 4V regulator * Reference OSC Specifications M...
Description VHF Band RF Modulator

File Size 38.03K  /  3 Page

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    PHD3055L

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD3055L
OCR Text ...-state resistance MAX. 60 12 50 0.18 UNIT V A W PINNING - SOT428 PIN 1 2 3 tab gate drain source DESCRIPTION PIN CONFIGURATION tab ...4V 5 3.5 V VGS = 3 V 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 ...
Description PowerMOS transistor Logic level FET 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 50.72K  /  7 Page

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    TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL TC5565APL-10 TC5565APL-12 TC5565APL-15 TC5565AFL- TC5565

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL TC5565APL-10 TC5565APL-12 TC5565APL-15 TC5565AFL- TC5565
OCR Text ...ata Retention Supply Voltage: 2.0-5.5V * * * * Directly TTL Compatible and Outputs Pin Compatible with 2764 type EPROM TC5565APL Famil...4V VOL-0.4v VIH or CE2-VOL or \CE1 = VIH or CE2=VOL 0r R/W = VIL or \OE=VIH VOUT=0~VDD tcycle =1.0us...
Description 65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology

File Size 113.04K  /  9 Page

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    CS5126XD8 CS5126XDR8 CS5124XD8 CS5126 CS5124XDR8 CS5124

ZF Electronics, Corp.
CHERRY[Cherry Semiconductor Corporation]
Part No. CS5126XD8 CS5126XDR8 CS5124XD8 CS5126 CS5124XDR8 CS5124
OCR Text ...BRD360CT D4 R3 47 Q2 IRFR220 R8 0.39 Package Options 8 Lead SO Narrow CS5124 BAS16LT1 C1 0.1F, 100V C4 0.47F, 25V C3 .022F ...4V, the oscillator is disabled and GATE will stay high. If the VFB pin is pulled < 0.49V, GATE will ...
Description High Performance, Integrated Current Mode PWM Controllers 高性能,集成电流模式PWM控制
High Performance/ Integrated Current Mode PWM Controllers

File Size 170.61K  /  10 Page

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    FS6128-04 FS6128-05 FS6128-06

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. FS6128-04 FS6128-05 FS6128-06
OCR Text 0 * Features 2.0 Description Phase-locked loop (PLL) device synthesizes output clock frequency from crystal oscillator or exter...4V VO = 0.1VDD; output driving high VO = 0.1VDD; output driving low VO = 0V; shorted for 30s, max. V...
Description PLL CLOCK GENERATOR IC WITH VCXO

File Size 62.47K  /  7 Page

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    HIRF630

HI-SINCERITY MICROELECTRONICS, CORP.
Hi-Sincerity Mocroelectronics
Part No. HIRF630
OCR Text ...e Junction to Ambient Min. Typ. 0.5 Max. 1.7 62 Units C/W HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteris...4V, ID=250uA VDS=200V VGS=20V VGS=-20V ID=10A VDS=200V VGS=10V VDD=100V ID=5A VGS=10V ID=5.0A, VG = ...
Description N-Channel MOSFETs N沟道MOSFET

File Size 51.97K  /  5 Page

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    HJ10387

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
HSMC CORP.
Part No. HJ10387
OCR Text ...00 1 10 100 1000 10000 10.00 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (mV) Switching Time & Collector Current 10 VCC=30V, IC=250IB1=250IB2 PT=1ms 100 Safe Operating Area Collector Current-IC (A) Sw...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 33.48K  /  3 Page

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    K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S56...4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF N...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

File Size 125.82K  /  10 Page

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    K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561...4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF N...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL

File Size 130.19K  /  11 Page

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