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  1.6 .063 Datasheet PDF File

For 1.6 .063 Found Datasheets File :: 17983    Search Time::2.578ms    
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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...urrent Total Power Dissipation 1 1 600 20 80 50 160 100 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and...6.5 2.7 2.8 0.50 mA nA 052-6253 Rev A Volts Collector-Emitter On Voltage (VGE = 15V, I C = I...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...= 90C Pulsed Collector Current 1 @ TC = 25C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy T...6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Voltage (VGE = 15V, I C ...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text ...= 90C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dis...6.5 2.7 2.8 0.5 5.0 6-2000 050-5976 Rev - Volts Collector-Emitter On Voltage (VGE = 15V, I C ...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6.2 -55 to 150 300 91 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6.2 -55 to 150 300 91 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6 10 17 34 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3600 ...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Ju...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT50M50JVR UNIT Volts Amps 500 77 308 30 40 700 5.6 -55 to 150 300 77 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Po...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...6 10 17 34 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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