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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9N327AD3ST FAIRCHILDSEMICONDUCTORCORP-ISL9N327AD3ST
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OCR Text |
...= 250A ID = 20A, VGS = 10V ID = 17A, VGS = 4.5V 1 0.023 0.033 3 0.027 0.040 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10... |
Description |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
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File Size |
182.17K /
11 Page |
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Diodes Incorporated Diodes, Inc.
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Part No. |
BSS123-7-F
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OCR Text |
...VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A
VDS = 25V, VGS = 0V, f = 1.0MHz
VDD = 30V, ID = 0.28A, RGEN = 50, VGS = 10V
Part mounted on FR-4 board with recommend... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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File Size |
79.12K /
3 Page |
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it Online |
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Intersil
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Part No. |
FSYA9250R FSYA9250D FN4583
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OCR Text |
... the data sheet.
Features
* 17A, -200V, rDS(ON) = 0.270 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up ... |
Description |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
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File Size |
55.57K /
8 Page |
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Intersil Corporation
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Part No. |
HUF76409D3 FN4665 HUF76409D3S
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OCR Text |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
* Ultra Low On-Resistance - rDS(ON) = 0.063, VGS = 10V - rDS(ON) = 0.071, VGS = 5V * Simulation Models - Temperature Com... |
Description |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
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File Size |
333.24K /
9 Page |
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Intersil Corporation
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Part No. |
HUF76409P3 FN4666
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OCR Text |
17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
* Ultra Low On-Resistance - rDS(ON) = 0.062, VGS = 10V - rDS(ON) = 0.070, VGS = 5V * Simulation Models - Temperature... |
Description |
From old datasheet system 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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File Size |
104.05K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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