10-200v pdf Datasheet P14 Full Text Search --- IC-ON-LINE

10-200v Datasheet PDF File

For 10-200v Found Datasheets File :: 19745 Search Time::3.985ms
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				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors] Powerex, Inc.
Part No.	FS14KM-9
OCR Text	10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75...200V, ID = 7A, VGS = 10V, RGEN = RGS = 50 IS = 7A, VGS = 0V Channel to case PERFORMANCE CURVES...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET HIGH-SPEED SWITCHING USE 14 A, 450 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	48.96K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIRFS4127 AUIRFS4127-15
OCR Text	... soldering temperature for 10 seconds 300(1.6mm from case) ? c ? thermal resistance symbol parameter typ. max. units c/w r ?...200v, v gs = 0v ??? ??? 250 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source forwa...
Description	Advanced Process Technology
File Size	509.45K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	HTA20
OCR Text	... 0 0 0 0 0 0 0 6.10 4.00 1.67 1.33 3.20 1.34 1.06 a line regulation (vr line ) 1,2,3 v in = 150, ...200v input, single/dual output) electrical performance characteristics (continued) for notes to ele...
Description	200V Input, Single/Dual Output
File Size	180.79K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	HFA60MB60C
OCR Text	...ge c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) parameter min. typ. max. units r q jc junction-to-c...200v q rr1 reverse recovery charge ??? 200 550 t j = 25c see q rr2 ??? 500 1400 t j = 125c fig. 7 ...
Description	600V 60A HEXFRED Common Cathode Diode in a D-60 package
File Size	296.41K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FK18SM-9
OCR Text	...-- Typ. -- -- -- -- 3 0.32 2.88 10.0 2200 300 45 40 80 200 80 1.5 -- -- Max. -- -- 10 1 4 0.41 3.69 -- -- -- -- -- -- -- -- 2.0 0.50 150 ...200V, ID = 9A, VGS = 10V, RGEN = RGS = 50 IS = 9A, VGS = 0V Channel to case IS = 18A, dis/dt = -1...
Description	HIGH-SPEED SWITCHING USE
File Size	52.60K / 5 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	FK18SM-12
OCR Text	...85 350 100 1.5 -- -- Max. -- -- 10 1 4 0.54 4.86 -- -- -- -- -- -- -- -- 2.0 0.45 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns ...200V, ID = 9A, VGS = 10V, RGEN = RGS = 50 IS = 9A, VGS = 0V Channel to case IS = 18A, dis/dt = -1...
Description	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	59.19K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGH20N60RUFD SGH20N60RUFDTU
OCR Text	...N60RUFD 600 20 32 20 60 25 220 10 195 75 -55 to +150 -55 to +150 300 Units V V A A A A A us W W C C C Notes : (1) Repetitive rating :...200V IF = 25A T C = 25 T C = 100 ------ Reverse Recovery Current, I rr [A] 0 1 2 3 Forward C...
Description	Discrete, Short Circuit Rated IGBT with Diode
File Size	624.81K / 8 Page	View it Online	Download Datasheet

				Cystech Electonics Corp...
Part No.	MTBD6N25J3
OCR Text	... - t d(on) 1, 2 - 10 - ns v ds =125v, i d =1.5a, v gs =10v, r g =25 tr 1, 2 - 17.8 - t d(off)...200v i d =1.5a maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source ...
Description	N-Channel Enhancement Mode Power MOSFET
File Size	481.88K / 9 Page	View it Online	Download Datasheet

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