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Mitsubishi Electric Corporation
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| Part No. |
CR8PM-12 CR8PM-8
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| OCR Text |
...2 s w w v v a c c g v ratings 12.6 8.0 120 60 5.0 0.5 6.0 10 2.0 C40 ~ +125 C40 ~ +125 2.0 1500 symbol v rrm v rsm v r (dc) v drm v d (dc)...state voltage dc off-state voltage voltage class unit v v v v v maximum ratings (t a =25 c, unless... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
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| File Size |
71.52K /
5 Page |
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WINBOND ELECTRONICS CORP
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| Part No. |
W49F002AP-12
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| OCR Text |
12, 2001 - 1 - revision a1 general description the w49f002a is a 2 - megabit, 5 - volt only cmos flash memory organized as 2...state when either #ce or #oe is high. refer to the timing waveforms for details. write mode de... |
| Description |
256K X 8 FLASH 5V PROM, 120 ns, PQCC32
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| File Size |
282.72K /
22 Page |
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Fairchild Semiconductor Corporation
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| Part No. |
AB-12
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| OCR Text |
12
Insight into Inductor Current
Introduction
The design of the main power inductor in a switching power supply provides many challenge...State 1, the input voltage is being applied to one side of the inductor, and the output voltage to t... |
| Description |
Application Bulletin AB-12
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| File Size |
19.73K /
4 Page |
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