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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
23226416.474 23226416 23226416.104 23226416.123 23226416.153 23226416.222 23226416.272 23226416.333
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| OCR Text |
...6 3439 2921 2492 2134 1834 1583 1370 1190 1038 907.5 796.1 700.5 618.1
25.78 19.13 14.32 10.82 8.245 6.335 4.907 3.830 3.011 2.384 1.900 1.525 1.231 1.000 0.8171 0.6712 0.5543 0.4602 0.3839 0.3219 0.2710 0.2293 0.1947 0.1661 0.1422 0.122... |
| Description |
SHIELDED "Y" CORD RCA PLUG TO RCA JACK 4" NTC热敏电阻，模压范
HANDSET CORD, CREAM 6 FT.
HANDSET CORD, BEIGE 25 FT.
DELUX DUAL AUDIO CABLE M TO F
Connector assemblies, Audio/RF/Video cables;
NTC Thermistors, Molded Range
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| File Size |
81.46K /
5 Page |
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it Online |
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Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10M09LVFR APT10M09B2VFR
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| OCR Text |
...N TYP MAX UNIT pF
10030 3730 1370 340 109 131 18 36 51 9
nC
Gate-Source Charge Turn-on Delay Time Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
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| File Size |
39.92K /
2 Page |
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it Online |
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Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10M09LVR APT10M09B2VR
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| OCR Text |
... MIN TYP MAX UNIT
10030 3730 1370 340 109 131 18 36 51 9
nC pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbo... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
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| File Size |
38.80K /
2 Page |
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it Online |
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United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
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| Part No. |
CHR0100ASJF_24 CHR0100A CHR0100A99F_00 CHR0100A99F/00 CHR0100ASJF/24
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| OCR Text |
...0100a
Chip size 1770 20 m x 1370 20 m Chip thickness 100 10 m
Ref. : DSCHR01000161 -9-Jun-00
4/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1... |
| Description |
5.8GHz I/Q Mixer 5.8GHz的的I / Q混频
M39012 MIL RF CONNECTOR 5.8GHz的的I / Q混频
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| File Size |
155.80K /
6 Page |
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it Online |
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International Rectifier
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| Part No. |
IRF2204LPBF IRF2204SPBF
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| OCR Text |
... 110 4.5 7.5 5890 1570 130 8000 1370 2380
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.6 m VGS = 10V, ID = 130A 4.0 V VDS = 10V, ID = 250A --- S VDS = 10V, ID = 130A 20 VDS = 40V, VGS = 0V A 250 V... |
| Description |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mヘ , ID = 170A )
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| File Size |
249.82K /
12 Page |
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it Online |
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Price and Availability
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