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  13750 Datasheet PDF File

For 13750 Found Datasheets File :: 14412    Search Time::5.922ms    
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    AN8808SB

PANASONIC[Panasonic Semiconductor]
Part No. AN8808SB
OCR Text ....6 6.2 -85 55.0 11 23 8.3 7.8 0 137.5 VLDON - H VLDOFF - H VLD VDet. (1) VDet. (2) VDet. - H VDet. - L VCC=5V VCC=5V VCC=5V, V1 : DC Sweep VCC=5V, V23 : DC Sweep VCC=5V, V23 : DC Sweep VCC=5V, V23 : DC Sweep VCC=5V, V23 : DC Sweep 3.5 3.5 0...
Description    Three-Beam Method Head Amplifier IC for CD supporting the hologram pick-up

File Size 85.70K  /  10 Page

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    AN8847 AN8847SB

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN8847 AN8847SB
OCR Text ... = VREF2 - 0.75 V 73 4.2 105 137 mV[p-p] 0.8 V V Symbol Conditions Min Typ Max Unit BIOFTR4 VCC1 = 5 V, VCC2 = 3.3 V VLDON = VREF2 OFTR high-level output voltage VOFTRH VCC1 = 5 V, VCC2 = 3.3 V f = 5 kHz, rectangular wave OFTR low...
Description Head amplifier IC for CD-ROM drive for 32 times speed or more

File Size 65.55K  /  7 Page

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    AN8849SB

PANASONIC[Panasonic Semiconductor]
Part No. AN8849SB
OCR Text ...C = VREF2 73 4.2 2.9 105 3.9 137 mV[p-p] 0.8 4.9 V V Symbol Conditions Min Typ Max Unit BIOFTR4 VCC1 = 5 V, VCC2 = 3.3 V EQSW = VREF2 OFTR high-level output voltage VOFTRH VCC1 = 5 V, VCC2 = 3.3 V f = 5 kHz, rectangular wave OFTR...
Description Head amplifier IC for CD-ROM drive for 24 times speed or more

File Size 65.46K  /  7 Page

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102)...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102)...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 64.27K  /  4 Page

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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.1...
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.16K  /  2 Page

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text ...20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102)...
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.64K  /  4 Page

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