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  1400w Datasheet PDF File

For 1400w Found Datasheets File :: 1085    Search Time::1.062ms    
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    EUROQUARTZ LTD
Part No. OC14GE12A-10.000-0.5/-4085
OCR Text ...0 10hz -100 100hz -130 1khz -140 10khz -145 phase noise (at 10mhz) test circuit part number format example: oc14ge12a-10.000-0.10/-20+70 ocxo package: oc14 rohs compliance g: rohs compliant blank: non-compliant e: output sinewave 12...
Description OCVCXO, SINE OUTPUT, 10 MHz

File Size 101.81K  /  1 Page

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    CXA-0323

Power Systems GmbH Co.KG
http://
Part No. CXA-0323
OCR Text ...0.5 max 600.2 (3) 20.5max 140.2 160.2 3 Note Typ. 4 mArms (2V) 1 max 8 max VER, 22/08/2001 1 CN1 2 1 4 mm diameter ...0W SINGLE OUTPUT) ELECTRICAL CHARACTERISTICS : (PRELIMNARY, Custom Design) Parameter Symbo...
Description DC-AC INVERTER UNIT 3.0W SINGLE OUTPUT

File Size 51.43K  /  2 Page

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    CXA-M1212-RJL CXA-0214

http://
Power Systems GmbH Co.KG
Part No. CXA-M1212-RJL CXA-0214
OCR Text ...umidity 95 %RH max DIMENSIONS : 140.5 max 112 }0.3 1 CN3 CN2 (PRELIMINARY INFORMATION) (7) 2-3 }0.2 1 18 max 9.8 }0.3 CN1 ...0W DUAL OUTPUTS WITH DIMMING FUNCTION) ELECTRICAL CHARACTERISTICS : Paramerters Symbol Vin (V) Cond...
Description DC-AC INVERTER UNIT 5.0W DUAL OUTPUTS WITH DIMMING FUNCTION

File Size 101.47K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RD20HMF1
OCR Text ... Vds VS. Coss CHARACTERISTICS 140 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 Crss(pF) Ta=+25C f=1MHz Ciss(pF) Vds VS. Crss ...0W Idq=1.0A Zg=ZI=50 ohm Po 7 6 5 Idd(A) 4 3 2 1 0 4 6 8 10 Vdd(V) 12 14 10 5 0 RD20HMF1 ...
Description Silicon MOSFET Power Transistor,900MHz,20W

File Size 333.23K  /  7 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07N4047M_06 RA07N4047M RA07N4047M-101 RA07N4047M06
OCR Text ...50 -60 3 @Pout=7W rd rd 140 120 TOTAL EFFICIENCY T(%) 100 80 60 40 20 VDD=9.6V Pin=20mW nd 2 @Pout=7W 0 0 390 400 410 420 ...0W + 1.5W) x 2.4C/W For long-term reliability, it is best to keep the module case temperature (Tcase...
Description RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO

File Size 91.26K  /  8 Page

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    IRL3102S

International Rectifier
Part No. IRL3102S
OCR Text ...S = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRL3102S 4200 3600 VGS , Ga...
Description HEXFET? Power MOSFET

File Size 126.03K  /  8 Page

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    NLP25010

Emerson Network Power
Part No. NLP25010
OCR Text ... L N 1 J3 JP1 VR7 J4 J2 1.140 (28.96) 1 0.750 (19.05) M3.0 5.850 (148.59) 1 0.25 (6.35) 6.250 (158.75) M3.0 4 PLACES ...0W 0C 10 C 20 C 30 C 40 C 50 C 60 C 70 C 0W 0C 10 C 20 C 30 C 40 C 50 C 60 C 70 C WaterfrontBu...
Description Active PFC and EN61000-3-2 compliant

File Size 475.96K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RD12MVS1
OCR Text ...s=7.5V Ta=+25C f=1MHz 8 7 140 120 Ciss(pF) 100 80 60 40 20 0 Vgs=6.0V 6 Ids(A) 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10 Vgs=5.5V Vgs=...0W f=175MHz Zout* Zin*=0.965-j7.73 Zout*=1.73-j1.14 f=175MHz Zin* Zin*: Complex conjugat...
Description RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

File Size 428.96K  /  7 Page

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    RA07H3340M RA07H3340M-E01 RA07H3340M-01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07H3340M RA07H3340M-E01 RA07H3340M-01
OCR Text ...V Pin =20mW P out @V GG=3.5V 140 120 TOTAL EFFICIENCY T(%) 100 T @P out =7W -20 HARMONICS (dBc) -30 -40 -50 -60 3 @P out =7W rd ...0W + 1.5W) x 2.4C/W = Tcase + 21.3 C For long-term reliability, it is best to keep the module case t...
Description MITSUBISHI RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO
From old datasheet system

File Size 61.64K  /  9 Page

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