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Maxim
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Part No. |
MAX3765 MAX3264-MAX3765
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OCR Text |
.........2162mW 10-Pin MAX (derate 20mw/C above +70C) ...........1600mW Operating Ambient Temperature Range .............-40C to +85C Storage Temperature Range .............................-55C to +150C Processing Temperature (dice) ............. |
Description |
" 3.0V to 5.5V, 1.25Gbps/2.5Gbps Limiting Amplifiers" From old datasheet system
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File Size |
1,620.46K /
17 Page |
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njr
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Part No. |
NJM2149 NJM2149RB1
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OCR Text |
...=34dB THD2 0.5 % V+3V, RL=8, PO=20mw, f=1kHz, GVD=12dB Power Supply SVR1 50 dB C1=, C2=0.01F, DC Rejection Ratio SVR2 12 dB C1=0.1F, C2=0, f=1kHz (V+=3.0V-6.0V) SVR3 47 dB C1=1.0F, C2=5.0F, f=1kHz Mute Attenuation MAT f =1kHz-20kHz, 1pin=0.... |
Description |
0.25 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8 From old datasheet system LOW VOLTAGE AUDIO POWER AMPLIFIER
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File Size |
108.46K /
7 Page |
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HITACHI[Hitachi Semiconductor]
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Part No. |
HL6738MG
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OCR Text |
...0
Relative Intensity
PO = 20mw
PO = 10mW PO = 5mW 685 690 Lasing Wavelength p (nm) 695
0
10
20
30
40
50
Optical Output Power PO (mW)
4
HL6738FM
Far Field Pattern 1.0 PO = 30mW TC = 25C Relative Intensity... |
Description |
From old datasheet system Visible High Power Laser Diode
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File Size |
38.02K /
9 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M68710EL
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OCR Text |
... dBc -
VDD=6V, VGG=3.5V, Pin=20mw ZG=50, VDD=4-9V, Load VSWR<4:1 VDD=9V, Pin=20mw, PO=3W (VGG adjust), ZL=20:1
-20 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are... |
Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER 290-330MHz 2W FM PORTABLE RADIO
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File Size |
14.41K /
1 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M68710TL
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OCR Text |
... dBc -
VDD=6V, VGG=3.5V, Pin=20mw ZG=50, VDD=4-8V, Load VSWR<4:1 VDD=9V, Pin=20mw, PO=2W (VGG adjust), ZL=20:1
-25 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are... |
Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER 330-360MHz 2W FM PORTABLE RADIO
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File Size |
14.39K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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