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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLM1314-6F
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OCR Text |
...2.191 2.226 2.255 2.266 2.267 2.251 2.219 2.176 159.9 149.3 138.5 127.5 116.3 105.2 93.9 82.4 71.1 59.9 48.8 .080 .085 .091 .096 .101 .106 ....045) 9.70.15 (0.382)
13.00.15 (0.512) 16.50.15 (0.650)
1. 2. 3. 4.
Gate Source (Flange) Dra... |
Description |
X, Ku-Band Internally Matched FET
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File Size |
296.26K /
4 Page |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLM7185-12F
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OCR Text |
... .516 .498 .473 .435 .380 .315 .251 .204 .200 .236
ANG
89.7 75.0 57.8 41.1 26.3 12.8 0.7 -10.2 -20.5 -30.2 -39.1 -47.8 -56.6 -65.7 -74.8 -84.1 -91.5 -94.1 -90.2 -83.9 -84.9
3
FLM7185-12F
C-Band Internally Matched FET
Case Style ... |
Description |
C-Band Internally Matched FET
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File Size |
283.44K /
4 Page |
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IXYS[IXYS Corporation]
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Part No. |
IXTY01N100D IXTP01N100D IXTU01N100D
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OCR Text |
... D (TAB)
TO-220 (IXTP)
TO-251 (IXTU)
1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU) Mounting torque TO-220 TO-2...045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.25... |
Description |
N-Channel, Depletion Mode High Voltage MOSFET
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File Size |
88.98K /
2 Page |
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IXYS[IXYS Corporation]
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Part No. |
IXTY01N80 IXTU01N80
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OCR Text |
...+150 150 -55 ... +150 V V
TO-251 AA
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight
TJ = 25C to 150C TJ = 25C to 150C; RGS = 1...045 .094 .045 .035 .045 .215 .023 .023 .245 .265 BSC BSC .700 .380 .090 .050 .060
Source-Drain Di... |
Description |
From old datasheet system High Voltage MOSFET
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File Size |
67.13K /
2 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC4419G
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OCR Text |
...0.332 0.311 0.293 0.277 0.263 0.251 0.242 0.235 0.230 0.227 0.227 0.228 0.232 0.237 0.243 0.251 0.261 0.271 0.281 0.293 0.305 0.317 0.330 0.343 0.356 0.369 0.382 0.394
S22 Angle -8.8 -17.4 -25.7 -33.7 -41.2 -48.3 -55.1 -61.6 -67.7 -73.7 ... |
Description |
InGaAs HEMT Chip
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File Size |
51.23K /
5 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MMG3013NT1
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OCR Text |
....381 117.045 114.76 112.507 110.251 108.055 105.876 103.703 101.399 99.278 97.137 95.075 93.021 90.99 88.942 86.97 84.972 83.012 81.047 79.114 77.223 75.325 73.436 71.577 69.734 |S12| 0.069393 0.069131 0.068870 0.068640 0.068460 0.068400 0.... |
Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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File Size |
206.11K /
12 Page |
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MPLUSE[M-pulse Microwave Inc.]
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Part No. |
MP4T324335 MP4T3243 MP4T324300 MP4T324333
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OCR Text |
...37.7 20.7 6.5 -7.9 Mag. 0.140 0.251 0.380 0.474 0.549 0.641 S12E Angle 68.1 56.1 45.6 31.0 19.8 7.4 Mag 0.446 0.492 0.480 0.502 0.520 0.540 S22E Angle 173.9 156.8 139.4 125.4 110.6 96.0
Typical Performance Curves
DC SAFE OPERATING RANGE... |
Description |
Bipolar High fT Low Voltage NPN Silicon Transistors
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File Size |
78.19K /
7 Page |
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MPLUSE[M-pulse Microwave Inc.]
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Part No. |
MP4T85639 MP4T856 MP4T85635
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OCR Text |
...0.242 0.243 0.246 0.246 0.246 0.251 0.258 0.260 0.275 0.307 0.318
S22E Angle -53.6 -69.8 -81.1 -92.9 -105.6 -119.2 -133.0 -147.8 -163.0 -177.5 167.9 152.4 136.5 121.9 107.2 29.1 -48.5 -126.1
MP4T85635 Typical Scattering Parameters in ... |
Description |
Moderate Power High fT NPN Silicon Transistor
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File Size |
98.23K /
9 Page |
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California Eastern Laboratories, Inc. CEL[California Eastern Labs]
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Part No. |
NE67483B NE67400
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OCR Text |
...2.662 2.568 2.537 2.436 2.333 2.251 2.132 2.100 2.028 1.988 1.929 1.854 1.815 1.758 1.714 1.666 1.657 1.624 1.597 1.577 1.542 1.500 1.483 1....045 0.052 0.056 0.062 0.065 0.067 0.070 0.071 0.073 0.073 0.073 0.074 0.075 0.075 0.077 0.078 0.077 ... |
Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
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File Size |
103.82K /
7 Page |
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it Online |
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