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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFK30V4045_05 MGFK30V4045 MGFK30V404505
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| OCR Text |
...stg Storage temperature *1 : Tc=25deg.C
(Ta=25deg.C) Ratings -15 -15 1000 -3 5 11 175 -65 / +175 Unit V V
GF -11
(1 ) G AT E (2 ) S O U R C E (F L AN G E ) (3 ) D R AIN
< Keep safety first in your circuit designs! > Mitsubishi E... |
| Description |
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
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| File Size |
248.01K /
3 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current I... |
| Description |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.84K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45A2527B
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| OCR Text |
...174%'
(.#0 )' &4#+0
)(
(Ta=25deg.C) Ratings -20 -10 107 175 -65 / +175 Unit V V W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage PT *1 Total power dissipation Tch Ch... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
322.71K /
6 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current I... |
| Description |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
234.61K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04
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| OCR Text |
... 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current I... |
| Description |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
235.26K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2527A
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| OCR Text |
... 5174%'
(.#0)' &4#+0
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(Ta=25deg.C) Ratings -15 -15 22 -61 76 88 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IG... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.54K /
3 Page |
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it Online |
Download Datasheet |
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NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFS48B2122
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| OCR Text |
...;,0805$7,1*6
WPKVOO
(Ta=25deg.C) Unit V V W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there i... |
| Description |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
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| File Size |
223.84K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS48V2527_04 MGFS48V2527 MGFS48V252704
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| OCR Text |
...ture Storage temperature
(Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product... |
| Description |
2.5 - 2.7GHz BAND 60W GaAs FET
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| File Size |
441.01K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML9XX17 ML9XX17SERIES
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| OCR Text |
...CAL/OPTICAL CHARACTERISTICS (Tc=25deg.C)
Symbol Ith Iop Vop Wp Parameter Thereshold current Operation current Operating voltage Test conditions CW,Vmod=0V CW,Po=5mW,Vmod=0V CW,Po=5mW,Vmod=0V Min. 4.0 10 35 Typ. 10 80 1.5 1550 30 45 1.0 6.0... |
| Description |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
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| File Size |
6.01K /
1 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
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| Part No. |
ML9XX18 ML9XX18SERIES
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| OCR Text |
...CAL/OPTICAL CHARACTERISTICS (Tc=25deg.C)
Symbol Ith Iop Vop Wp Parameter Thereshold current Operation current Operating voltage Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output Cutoff... |
| Description |
InGaAs MQW-DFB LASER DIODE WITH EA MODULATOR
nulInGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR nulInGaAsP分布反馈半导体激光器与EA调制
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| File Size |
27.30K /
1 Page |
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it Online |
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