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262 144-bit Datasheet PDF File

For 262 144-bit Found Datasheets File :: 1984 Search Time::2.188ms
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				MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr]
Part No.	DS1230 DS1230W DS1230WP-150-IND 1230W DS1230W-100 DS1230W-150 DS1230WP-150
OCR Text	...3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toler...
Description	3.3V 256k Nonvolatile SRAM 3.3V 256K Nonovolatile SRAM From old datasheet system
File Size	212.82K / 11 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256B HM62V16256BLTT-7 HM62V16256BLTT-7SL HM62V16256BLTT-8 HM62V16256BLTT-8SL HM62V16256BSERIES
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; ther...
Description	4 M SRAM (256-kword x 16-bit)
File Size	71.17K / 16 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256CI HM62V16256CLTTI-7
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standb...
Description	Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) 宽温版本4 M的SRAM56 - KWord的x 16位）
File Size	76.13K / 18 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62V16256C HM62V16256CLTT-5 HM62V16256CLTT-5SL HM62V16256CLTT-7 HM62V16256CLTT-7SL
OCR Text	... is 4-Mbit static RAM organized 262,144-word x 16-bit. HM62V16256C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby...
Description	4 M SRAM (256-kword x 16-bit) 四米的SRAM56 - KWord的x 16位）
File Size	75.24K / 18 Page	View it Online	Download Datasheet

				Integrated Silicon Solu... Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
Part No.	IS41LV16256-35K IS41LV16256-35T IS41LV16256-60K IS41LV16256-60KI IS41LV16256-60T IS41LV16256-60TI IS41C16256 IS41C16256-35K IS41C16256-35T IS41C16256-50KI IS41C16256-50TI IS41C16256-60K IS41C16256-60KI IS41C16256-60T IS41C16256-60TI
OCR Text	... IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle ...
Description	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
File Size	151.22K / 19 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM68257ETG-15
OCR Text	... DESCRIPTION The KM68257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68257E uses 8 common input and output lines and has an output enable pin which operates faster than address access...
Description	32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
File Size	165.73K / 8 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH5PV16256
OCR Text	262,144 words x 16 bit organization * Power supply: +3.0 0.15 V * Access time: 120 ns (MAX.) * Cycle time: 190 ns (MIN.) * Power consumption (MAX.): 126 mW (Operating) 94.5 W (Standby = CMOS input level) 220.5 W (Self-refresh = CMOS input ...
Description	CMOS 4M (256K x 16) Pseudo-Static RAM
File Size	114.97K / 14 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	PA28F400BL-B150 PA28F400BL-T150 28F400BL-TB E28F004BL-B150 E28F004BL-T150 E28F400BL-B150 E28F400BL-T150
OCR Text	...ized as either 524 288 bytes or 262 144 words of information They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the industry standard ROM EPROM pinout The Intel 28F004BL-T B are 8-bit wide low po...
Description	4-MBlT (256K x 16 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
File Size	486.33K / 44 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	PA28F400BX-B120 PA28F400BX-B60 PA28F400BX-B80 PA28F400BX-T120 PA28F400BX-T60 PA28F400BX-T80 TE28F004BX-B80 TE28F004BX-T80 TE28F400BX-B80 TE28F400BX-T80 TB28F400BX-B80 TB28F400BX-T80 28F400BX-TB E28F004BX-B120 E28F004BX-B60 E28F004BX-B80 E28F004BX-T120 E28F004BX-T60 E28F004BX-T80 E28F400BX-B120 E28F400BX-B60 E28F400BX-B80 E28F400BX-T120 E28F400BX-T60 E28F400BX-T80
OCR Text	...ized as either 524 288 bytes or 262 144 words of information They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the industry standard ROM EPROM pinout The Intel 28F004BX-T B are 8-bit wide flash ...
Description	4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
File Size	549.26K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC55V16256JI TC55V16256JI-12 TC55V16256JI-15
OCR Text	262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit technique...
Description	262, 144-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	180.58K / 11 Page	View it Online	Download Datasheet

For 262 144-bit Found Datasheets File :: 1984 Search Time::2.188ms
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