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Alpha
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Part No. |
AO6419 AO6419L
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OCR Text |
... nc q g (4.5v) 7.6 9.5 nc q gs 2nc q gd 3.8 nc t d(on) 8.3 ns t r 5ns t d(off) 29 ns t f 14 ns t rr 23.5 30 ns q rr 13.4 nc this product has been designed and qualified for the consumer market. applications or uses as critical components ... |
Description |
P-Channel Enhancement Mode Field Effect Transistor P -沟道增强型场效应晶体
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File Size |
105.23K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRLU3715ZCPBF IRLR3715ZCPBF
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OCR Text |
... RDS(on) max
20V 11m:
Qg
7.2nc
Benefits
l l
Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3715ZCPbF
I-Pak IRLU3715ZCPbF
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C I... |
Description |
HEXFET Power MOSFET
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File Size |
292.07K /
11 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRLR3715ZPBF
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OCR Text |
...RLR3715ZPbF IRLU3715ZPbF
Qg
7.2nc 11m:
PD - 95088A
VDSS RDS(on) max
20V
Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3715Z
I-Pak IRLU3715Z
Absolute Maximum Ratings
Parameter
VDS... |
Description |
HEXFET Power MOSFET
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File Size |
318.66K /
11 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
PMG85XP
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OCR Text |
...a; v gs =-4.5v; t j =25c -4.87.2nc q gs gate-source charge - 1.1 - nc q gd gate-drain charge - 1 - nc c iss input capacitance v ds = -10 v; f = 1 mhz; v gs =0v; t j =25c - 560 - pf c oss output capacitance - 80 - pf c rss reverse transfer... |
Description |
20 V, 2 A P-channel Trench MOSFET 20V,2A P沟道场效应管
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File Size |
704.88K /
16 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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