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Samsung semiconductor
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| Part No. |
K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
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| OCR Text |
... document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to ...4e,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6F,6G,6H,6J,6K,5L-7L,4M-8M... |
| Description |
512Kx36-bit, 1Mx18-bit QDR SRAM
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| File Size |
359.88K /
17 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7R161882B K7R163682B K7R160982B
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| OCR Text |
...rk Advance Preliminary
0.2 0.3 0.4
Dec. 26, 2002 Jan. 27, 2003 Mar. 20, 2003
Preliminary Preliminary Preliminary
0.5
April. 4...4e,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M... |
| Description |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
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| File Size |
425.70K /
19 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30 K7R320982M
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| OCR Text |
...urrent parameter (Icc and Isb). 3. Change the Max. speed bin from -33 to -30. 1. Change the ISB1. Speed Bin -30 -25 -20 -16 1.0 2.0 1. Final...4e,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M... |
| Description |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
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| File Size |
415.94K /
18 Page |
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it Online |
Download Datasheet |
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Galvantech
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| Part No. |
GVT71256B36 GVT71512B18 71256B36
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| OCR Text |
...256K x 36 SRAM 512K x 18 SRAM
+3.3V SUPPLY, WITH BURST COUNTER
technology. Each memory cell consists of four transistors and two high valu...4e 2B - (not available for PBGA) 4F 4G 4A
98 97 92 (for TA Version only) 86 83 84
CE# CE2 CE2#... |
| Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM
From old datasheet system
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| File Size |
255.58K /
25 Page |
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Galvantech
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| Part No. |
GVT71256C36 GVT71512C18 71256C36
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| OCR Text |
...* * * Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz Fast OE# access times: 2.5ns, 3.0ns, and 3.5ns ...4e 2B - (not available for PBGA) 4F 4G 4A
98 97 92 (for TA Version only) 86 83 84
CE# CE2 CE2#... |
| Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM
From old datasheet system
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| File Size |
255.50K /
25 Page |
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it Online |
Download Datasheet |
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Galvantech
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| Part No. |
GVT71256D18 71256D18
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| OCR Text |
... * * * * * * Fast access times: 3.5, 3.8, and 4.0ns Fast clock speed: 166, 150, 133, and 117MHz Provide high performance 3-1-1-1 access rate...4e 6B
98 92
CE# CE2#
InputInputSynchronous
Chip Enable: This active LOW input is used to... |
| Description |
256K X 18 SYNCHRONOUS BURST SRAM
From old datasheet system
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| File Size |
173.28K /
14 Page |
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it Online |
Download Datasheet |
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Galvantech
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| Part No. |
GVT71256D36 71256D36
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| OCR Text |
...* * * Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz Fast OE# access times: 2.5ns, 3.0ns, and 3.5ns ...4e 2B - (not available for PBGA) 4F 4G 4A
98 97 92 (for TA Version only) 86 83 84
CE# CE2 CE2#... |
| Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM
From old datasheet system
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| File Size |
256.13K /
25 Page |
View
it Online |
Download Datasheet |
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