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For 3-ghz Found Datasheets File :: 27270 Search Time::1.516ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold b...GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 micron...GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB ...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 micron...GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB ...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500 micro...GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB ...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and...GHz frequency range. Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditio...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and...GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz Units dB dB dB dB dB Min. Typ. M...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250 microns. Proven gold based ...GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f =12.0 GHz f = 12.0 GHz Units d...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	... 137 GATE DRAIN 1 3 GAIN (dB) 15 MAG 10 S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 ...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21170
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and...GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB ...
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
File Size	41.90K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	... 211 GATE DRAIN 1 3 2 SOURCE 20 GAIN (dB) MSG MAG 10 S 21 0 0.1 1 FREQUENCY (GHz) 10 This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total ga...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

For 3-ghz Found Datasheets File :: 27270 Search Time::1.516ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |