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ST Microelectronics
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| Part No. |
P6NC80
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d =3a 1.5 1.8 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =3a 7s c iss ... |
| Description |
Search --To STP6NC80
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| File Size |
442.14K /
13 Page |
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ST Microelectronics
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| Part No. |
STP10NB20FP
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 5 a 0.25 0.40 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 10 a dynamic symbol parameter test conditi... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
181.01K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP7NB30
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.5 a 0.75 0.9 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 7a dynamic symbol parameter test conditio... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
300.72K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP3NB90FP
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| OCR Text |
...voltage v ds =v gs ,i d = 250 a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 1.7 a 44.2 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v;i d = 1.7 a 3s c iss c oss c rss i... |
| Description |
N-CHANNEL 900 V - 4 OHM - 3.5 A - TO-220/TO-220FP POWERMESH MOSFET
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| File Size |
383.04K /
10 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70ZT4
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 3.5 a 1.1 1.38 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 3.5a 7... |
| Description |
N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
517.39K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD5NM60-1
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| OCR Text |
...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5 a 0.9 1 w
3/13 stp8nm60, stp8nm60fp, std5nm60, std5nm60-1 electrical characteristics (t case =25c unless otherwise specified) dynam... |
| Description |
N-CHANNEL 600V - 0.9 OHM - 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFET
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| File Size |
593.85K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
W7NB80
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| OCR Text |
...oltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =3a 1.6 1.9 w w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 6.5 a dynamic symbol parameter test conditions min. typ. m... |
| Description |
Search --To STW7NB80
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| File Size |
117.88K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP5NB60 STP5NB60FP
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 2.5 a 1.8 2.0 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.0 a dynamic symbol parameter test condit... |
| Description |
N-CHANNEL 600V - 1.8 OHM - 5A - TO-220/TO-220FP POWERMESH MOSFET
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| File Size |
356.29K /
9 Page |
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it Online |
Download Datasheet |
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