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Advanced Power Electron...
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Part No. |
AP4501AGEM-HF-16
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OCR Text |
...nel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 drain current 3 , v gs @ 10v 8.0 -4.6 a i ...16 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage... |
Description |
Fast Switching Performance
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File Size |
130.40K /
8 Page |
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SeCoS Halbleitertechnol...
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Part No. |
SSRF50P04-16
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OCR Text |
30-nov-2010 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant p...16 v ds (v) r ds (on) (m ? ? i d (a) -40 16@v gs = -10v 50 28@v gs = -4.5v 38 ... |
Description |
P-Ch Enhancement Mode Power MOSFET
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File Size |
141.51K /
2 Page |
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it Online |
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ST Microelectronics
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Part No. |
STV60NE06-16
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OCR Text |
...)max V DS = 25 V f = 1 MHz I D =30 A V GS = 0 Min. 20 Typ. 35 4600 580 140 Max. Unit S pF pF pF
2/6
STV60NE06-16
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time To... |
Description |
N-CHANNEL 60V - 0.013 OHM - 60A POWERSO-10 STRIPFET POWER MOSFET
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File Size |
122.99K /
6 Page |
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it Online |
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Advanced Power Electron...
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Part No. |
AP9938GEM-HF-16
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OCR Text |
...roduct 1 pulsed drain current 1 30 total power dissipation 2 -55 to 150 parameter 8.5 201501072 drain-source voltage 20 gate-source voltage ...16 26 nc q gs gate-source charge v ds =10v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v -... |
Description |
Fast Switching Performance
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File Size |
52.85K /
5 Page |
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it Online |
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ST Microelectronics
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Part No. |
STP60NE06-16 STP60NE06-16FP
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OCR Text |
...est Conditions ID = 250 A I D = 30 A 60 Min. 2 Typ. 3 0.013 Max. 4 0.016 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V ...16/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter... |
Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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File Size |
396.54K /
9 Page |
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it Online |
Download Datasheet
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