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  30-400 mhz 16 w cw power trans Datasheet PDF File

For 30-400 mhz 16 w cw power trans Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    意法半导
ST Microelectronics
STMicroelectronics N.V.
Part No. M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70MH6TR M48T37V-70MH6TR M48T37Y-10MH1 M48T37VSH M48T37V-70MH1TR M48T37V-10MH6TR
Description trans PREBIASED DUAL NPN SOT363
trans PREBIASED DUAL COMP SOT363
trans PREBIAS DUAL COMP SOT-563
trans PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mw 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mw 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mw 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mw 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时

File Size 131.17K  /  20 Page

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    DS1000 DS1000-75 DS1000-250 DS1000-60 DS1000-100 DS1000-125 DS1000-150 DS1000-175 DS1000-20 DS1000-200 DS1000-25 DS1000-

Maxim Integrated Products, Inc.
Unisem Group
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
Part No. DS1000 DS1000-75 DS1000-250 DS1000-60 DS1000-100 DS1000-125 DS1000-150 DS1000-175 DS1000-20 DS1000-200 DS1000-25 DS1000-30 DS1000-35 DS1000-40 DS1000-45 DS1000-50 DS1000-500 DC1000
Description trans SS NPN 45V 100MA SOT-523 5抽头硅延迟线
trans SS NPN 50V 100MA SOT23 5抽头硅延迟线
RECTIFIER BRIDGE 1A 200V DB-1 5抽头硅延迟线
RECTIFIER BRIDGE 1A 100V DB-1
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
RECTIFIER BRIDGE 1A 50V DB-1
transISTOR PNP 45V 100MA SOT563
trans SS NPN 50V SOT-323
RECTIFIER BRIDGE 1A 400V DB-1
5-Tap Silicon Delay Line

File Size 64.45K  /  5 Page

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    NGB8202N NGB8202NT4

ONSEMI[ON Semiconductor]
Part No. NGB8202N NGB8202NT4
Description Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK

File Size 111.59K  /  8 Page

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    ADPOw[Advanced Power Technology]
Part No. APT12040JVR
Description POwER MOS V 1200V 26A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

File Size 207.00K  /  4 Page

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    APT5040CNR

ADPOw[Advanced Power Technology]
Part No. APT5040CNR
Description POwER MOS IV 500V 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS

File Size 52.43K  /  4 Page

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    Motorola Mobility Holdings, Inc.
Part No. MTw10N40E
Description TMOS E-FET POwER FIELD EFFECT transISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-247

File Size 71.13K  /  2 Page

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    APT10040B2VR APT10040LVR

ADPOw[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT10040B2VR APT10040LVR
Description POwER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 38.07K  /  2 Page

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    SUB85N10-10-E3 SUP85N10-10-E3

Vishay Siliconix
Part No. SUB85N10-10-E3 SUP85N10-10-E3
Description trans MOSFET N-CH 100V 85A 3-Pin(2 Tab) TO-263
trans MOSFET N-CH 100V 85A 3-Pin(3 Tab) TO-220AB

File Size 71.53K  /  6 Page

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    Advanced Power Technology Ltd.
Part No. APT12040L2LL
Description POwER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 64.27K  /  2 Page

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    Advanced Power Technology Ltd.
Part No. APT12040JLL
Description POwER MOS 7 1000V 24A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 69.45K  /  2 Page

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For 30-400 mhz 16 w cw power trans Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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