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  4.720v Datasheet PDF File

For 4.720v Found Datasheets File :: 473    Search Time::2.968ms    
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    2SK3534-01MR

Fuji Electric
Part No. 2SK3534-01MR
OCR Text ...uls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO Ratings 900 900 7 28 30 7 269.5 40 5 2.16 80 +150 -55 to +150 2 Un...720V VGS=0V VGS=30V VDS=0V ID=3.5A VGS=10V ID=3.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3.5A VG...
Description    N-CHANNEL SILICON POWER MOSFET

File Size 117.36K  /  4 Page

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    FQB5N90 FQI5N90

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB5N90 FQI5N90
OCR Text ...e 1) FQB5N90 / FQI5N90 900 5.4 3.42 21.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Sou...720V Capacitance [pF] 1200 1000 800 600 400 200 0 -1 10 Coss 6 Crss Notes : 1. VG...
Description 900V N-Channel MOSFET

File Size 680.64K  /  9 Page

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    GA150TD120K

List of Unclassifed Manufacturers
ETC
Part No. GA150TD120K
OCR Text ...yp. 0.1 400 Max. 0.10 0.15 4.0 3.0 - Units o C/W N.m g 1 GA150TD120K Electrical Characteristics @ TJ=25oC(unless otherwis...720V VGE=15V mJ VGE = 0V pF nS A nC A/s VCC = 30V f =1MHZ IC = 150A RG1=15 RG2=0 VCC=720V di/dt=1...
Description Short Circuit Rated Ultra-Fast tm Speed IGBT

File Size 120.85K  /  2 Page

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    GA150TD120U

International Rectifier
Part No. GA150TD120U
OCR Text ...T-A-PAK Features * Generation 4 IGBT technology * Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz...720V -- VGE = 15V -- mJ See Fig.17 through Fig.21 -- 90 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- n...
Description From old datasheet system
HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT

File Size 295.12K  /  10 Page

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    AP09N90CW

Advanced Power Electronics Corp.
Part No. AP09N90CW
OCR Text ...D BVDSS RDS(ON) ID 900V 1.4 7.6A G S Description AP09N90C provides minimize on-state resistance , superior switching performanc...720V, VGS=0V VGS= 30V ID=7.2A VDS=540V VGS=10V VDD=450V ID=7.2A RG=6.8,VGS=10V RD=62.5 VGS=0V VDS=1...
Description N-CHANNEL ENHANCEMENT MODE

File Size 72.16K  /  4 Page

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    AP09N90W

Advanced Power Electronics Corp.
Part No. AP09N90W
OCR Text ....2 536 221 51 Max. Units 1.2 4 10 100 100 120 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficie...720V, VGS=0V VGS= 30V ID=8.6A VDS=540V VGS=10V VDD=450V ID=5A RG=10,VGS=10V RD=90 VGS=0V VDS=25V f=...
Description N-CHANNEL ENHANCEMENT MODE

File Size 71.29K  /  4 Page

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    STW11NK90Z

STMicroelectronics
Part No. STW11NK90Z
OCR Text .... . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 5 3 4 5 Test circuits ........720V VDD=720V, ID = 9.2A VGS =10V (see Figure 14) 1. Pulsed: pulse duration=300s, duty cycle 1.5%...
Description N-channel 900V - 0.82OHM - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET

File Size 218.20K  /  12 Page

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    FQP2NA90

Fairchild Semiconductor
Part No. FQP2NA90
OCR Text ...tion (TC = 25C) 310 2.8 10.7 4.0 107 0.85 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead temp...720V Capacitance [pF] 500 400 300 200 100 0 -1 10 Coss 6 Crss Notes : 1. VGS = 0 ...
Description 900V N-Channel MOSFET

File Size 696.89K  /  8 Page

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    FQP8N90C FQPF8N90C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP8N90C FQPF8N90C
OCR Text ...3 * 3.8 * 25 * 30 850 6.3 17.1 4.0 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanch...720V 2000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 1500 6 Coss ...
Description 900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET

File Size 863.12K  /  10 Page

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For 4.720v Found Datasheets File :: 473    Search Time::2.968ms    
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