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  400v n-channel b-fet substitut Datasheet PDF File

For 400v n-channel b-fet substitut Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHP160NQ08T PHB160NQ08T
Description CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, n-channel, Si, POWER, MOSFET
n-channel TrenchMOS standard level FET
n-channel Trenchmos (tm) standard level FET

File Size 79.29K  /  13 Page

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    IRF[International Rectifier]
Part No. IRHM7360 IRHM8360
Description 400v 1000kRad Hi-Rel Single n-channel TID Hardened MOSFET in a TO-254AA package
REPETITIVE AVALANCHE AND dv/dt RATED
400v 100kRad Hi-Rel Single n-channel TID Hardened MOSFET in a TO-254AA package

File Size 318.05K  /  12 Page

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    PHILIPS[Philips Semiconductors]
Part No. BUK9Y19-55B
Description n-channel TrenchMOSlogic level FET
n-channel TrenchMOS⑩ logic level FET
n-channel Trenchmos (tm) logic level FET

File Size 92.61K  /  12 Page

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    UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2

NEC[NEC]
Part No. UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2
Description n-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING n-channel POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, n-channel, Si, POWER, MOSFET

File Size 60.73K  /  8 Page

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    MTB10N40E MTB10N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB10N40E MTB10N40E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES

File Size 272.75K  /  10 Page

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    MTB2N40E MTB2N40E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N40E MTB2N40E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS

File Size 270.98K  /  10 Page

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    MTB9N25E MTB9N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB9N25E MTB9N25E-D
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS

File Size 258.36K  /  10 Page

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    FGD3040G2 FGD3040G2F085

Fairchild Semiconductor
Part No. FGD3040G2 FGD3040G2F085
Description EcoSPARK 300mJ, 400v, n-channel Ignition IGBT
EcoSPARK®2 300mJ, 400v, n-channel Ignition IGBT
EcoSPARK?2 300mJ, 400v, n-channel Ignition IGBT

File Size 665.38K  /  10 Page

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    MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D
Description TMOS E-FET High Energy Power FET n-channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system

File Size 251.59K  /  8 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
Description TMOS E-FET High Energy Power FET n-channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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For 400v n-channel b-fet substitut Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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