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4370 Datasheet PDF File

For 4370 Found Datasheets File :: 13274 Search Time::5.844ms
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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A)...
Description	POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVFR
OCR Text	... 370 2.96 -55 to 150 300 30 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage ...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.45K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVR
OCR Text	... 370 2.96 -55 to 150 300 30 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case ...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.07K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017 APT5017SVR
OCR Text	... 370 2.96 -55 to 150 300 30 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case ...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	... IGSS VGS(TH) 250 1000 100 2 4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use...370 45 60 100 25 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Ri...
Description	POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...370 390 35 202 18 15 66 9 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Mil...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 33A 0.240 Ohm
File Size	39.43K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2VR APT8024LVR
OCR Text	...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...370 390 35 18 15 66 9 202 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Dela...
Description	POWER MOS V 800V 33A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	38.06K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	...ER MOSFETS 800 27 108 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Pow...370 40 170 28 28 72 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8056BVFR
OCR Text	... 370 2.96 -55 to 150 300 16 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage ...
Description	POWER MOS V 800V 16A 0.560 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8056BVR
OCR Text	... 370 2.96 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case ...
Description	POWER MOS V 800V 16A 0.560 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.19K / 4 Page	View it Online	Download Datasheet

For 4370 Found Datasheets File :: 13274 Search Time::5.844ms
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