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  50.29 Datasheet PDF File

For 50.29 Found Datasheets File :: 103865    Search Time::2.281ms    
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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...1 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 v ss dq7 v ss q nc dq6 v dd q nc dq5 v ss q nc dq4 v dd q nc v ss nc dqm clk cke nc a11 a9 a8 a7 a6 a5 a4 v ss pin configurations 54 pi...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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    POLYFET[Polyfet RF Devices]
Part No. MGDQ01
OCR Text ...z Vdd = 28.0 Volts MGDQ01 50 ohms Input/Output Impedance Description The MGDQ01 is a 15 Watt, 2 stage high gain amplifier covering...29.0 25 VAGC=8V Gain MGDQ01 F=30MHz Vds=28Vdc 37 36 24 20 16 MGDQ01 F=250MHz Vds=28Vdc ...
Description Power RF Amplifiers

File Size 74.61K  /  2 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0913A
OCR Text ...ff)=200mA f=1.9GHz 60 Po 50 PAE 15 Gp 30 10 20 5 10 0 0 5 10 15 20 25 Pin(dBm) 0 IM3,Po(SCL) vs. Pi(SC...29 -175.89 177.02 170.52 165.48 159.35 150.60 138.53 123.05 104.53 83.65 61.24 38.21 15.46 -6.26 -26...
Description L & S BAND GaAs FET [ SMD non - matched ]

File Size 43.80K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0915A_03 MGF0915A MGF0915A03
OCR Text ...High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers QUALITY...29.03 12.43 -3.09 (mag) 4.852 2.941 2.144 1.746 1.456 1.211 1.032 0.934 0.888 0.836 0.759 0.798 0.73...
Description L & S BAND GaAs FET

File Size 42.10K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0915A
OCR Text ...High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers QUALITY...29.03 12.43 -3.09 (Ta=25C, VDS=10V, ID=800mA, Reference Plane see Fig.1) S21 S12 (mag) 0.013 0.0...
Description L & S BAND GaAs FET[ SMD non - matched ]

File Size 1,309.44K  /  48 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0917A
OCR Text ...5 0 5 10 Pin(dBm) 20 10 0 30 60 50 Po Gp(dB),PAE(%) IM3(dBc) Vds=10V Id(off)=75mA f=1.9GHz 40 Pi(SCL) vs.Po(SCL),IM3 30 25 20 15 1...29 -84.14 -95.18 -104.65 -112.60 -119.01 -123.90 -127.39 -129.77 -131.44 -132.90 -134.71 -137.32 -14...
Description L & S BAND GaAs FET [ SMD non matched ]
L & S BAND GaAs FET [ SMD non - matched ]

File Size 43.54K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGF0918A 0918A
OCR Text ...0 27 45 20 1.0 35 Max. 400 -5.0 50 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject...29.56 -45.03 -60.22 -72.06 -81.77 -90.08 -97.23 -103.61 -109.26 -114.47 -119.16 -123.61 -127.67 -131...
Description From old datasheet system
L & S BAND GaAs FET [ SMD non - matched ]

File Size 85.91K  /  3 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0919A
OCR Text ... 70 30 60 25 Po 50 Gp(dBm)PAE(%) Po(dBm) 20 PAE 40 15 Gp 30 10 20 5 10 0 -10 -5 0 5 10 15 Pi...29 -15.15 -15.98 -16.89 -18.03 -19.57 -21.70 -24.65 -28.65 -33.94 -40.75 -49.26 -59.62 -71.91 -86.08...
Description L & S BAND GaAs FET [ SMD non matched ]

File Size 42.74K  /  4 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0921A
OCR Text ...GHz 30 25 Po(dBm) PAE 60 50 40 30 Gp 20 15 10 5 0 -5 0 5 10 Pin(dBm) 15 20 25 20 10 0 Pi(SCL) vs.Po(SCL),IM3 40 35 30 25 20...29 -144.64 -156.53 -162.98 -167.59 -171.55 -174.74 -176.80 -178.13 179.10 178.57 176.73 173.69 169.7...
Description LnS Band GaAs FET
L & S BAND GaAs FET

File Size 427.43K  /  24 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC36V3436 C363436
OCR Text ...operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3...29 27 VDS=10(V) IDS=1.2(A) f=3.6GHz Delta f=5(MHz) Po 10 0 -10 -20 PAE 25 23 21 19 7 9 11 ...
Description From old datasheet system
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

File Size 130.71K  /  2 Page

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