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  8m x 16 ddr dram 0 75 ns pbga6 Datasheet PDF File

For 8m x 16 ddr dram 0 75 ns pbga6 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S561632C-L1L K4S561632C-L60 K4S561632C-L75 K4S561632C-L7C K4S561632C-TC K4S5

Samsung semiconductor
Part No. K4S560000'>1632C-TC75 K4S560000'>1632C K4S560000'>1632C-L1H K4S560000'>1632C-L1L K4S560000'>1632C-L60 K4S560000'>1632C-L75 K4S560000'>1632C-L7C K4S560000'>1632C-TC K4S560000'>1632C-TC7C
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54
IC,S0000'>dram,40000'>x4M0000'>x0000'>16,CMOS,TSOP,54PIN,PLASTIC
256Mbit S0000'>dram 4M 0000'>x 0000'>16bit 0000'>x 4 Banks Synchronous 0000'>dram

File Size 112.98K  /  11 Page

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    Alliance Semiconductor
Part No. AS4LC256K0000'>16E0-35JC AS4LC256K0000'>16E0-35TC AS4LC256K0000'>16E0-45JC AS4LC256K0000'>16E0-45TC AS4LC256K0000'>16E0-60JC AS4LC256K0000'>16E0-60TC
Description 3.3V 256K 0000'>x 0000'>16 CM0S 0000'>dram (EDO), 60ns RAS access time
3.3V 256K 0000'>x 0000'>16 CM0S 0000'>dram (EDO), 45ns RAS access time
3.3V 256K 0000'>x 0000'>16 CM0S 0000'>dram (EDO), 35ns RAS access time
0000'>x0000'>16 EDO Page Mode 0000'>dram

File Size 522.34K  /  25 Page

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    Micron Technology, Inc.
Part No. MT48LC0000'>16M0000'>16A2FG-7EITD MT48LC0000'>16M0000'>16A2P-75ITDTR
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 5.4 ns, PBGA54 8 0000'>x 14 MM, FBGA-54
0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

File Size 2,477.69K  /  92 Page

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    K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S51

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S510000'>1632D K4S510000'>1632D-KC K4S510000'>1632D-KC_L1H K4S510000'>1632D-KC_L7C K4S510000'>1632D-KC_L75 K4S510000'>1632D-KC_L1L K4S510000'>1632D-KC/L1H K4S510000'>1632D-KC/L1L K4S510000'>1632D-KC/L75 K4S510000'>1632D-KC/L7C K4S510000'>1632D-KC1H
Description 32M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PDSO54
DDP 512Mbit S0000'>dram 0000'>8m 0000'>x 0000'>16bit 0000'>x 4 Banks Synchronous 0000'>dram LVTTL 12兆内000000'>16 × 4银行同步0000'>dram LVTTL

File Size 44.56K  /  9 Page

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    Cypress Semiconductor, Corp.
Part No. K4H1G0438A-UCB30 K4H1G0838A-UCB00
Description 256M 0000'>x 4 0000'>ddr 0000'>dram, 0.7 ns, PDSO66 0.400 0000'>x 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
120000'>8m 0000'>x 8 0000'>ddr 0000'>dram, 0.75 ns, PDSO66

File Size 359.14K  /  24 Page

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Part No. UPD452560000'>163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45256441G5-A80L-9JF UPD45256841G5-A10B-9JF
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PDSO54
64M 0000'>x 4 SYNCHRONOUS 0000'>dram, 6 ns, PDSO54
32M 0000'>x 8 SYNCHRONOUS 0000'>dram, 7 ns, PDSO54

File Size 650.31K  /  84 Page

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    HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HYB3164405AT-40 HYB3165405AT-40 HYB3165405AJ-60 HYB3165405AJ-50

SIEMEns AG
Infineon Technologies AG
Part No. HYB30000'>165405AJ-40 HYB30000'>164405AJ-40 HYB30000'>164405AT-50 HYB30000'>164405AT-40 HYB30000'>165405AT-40 HYB30000'>165405AJ-60 HYB30000'>165405AJ-50
Description High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
0000'>16M 0000'>x 4 EDO 0000'>dram, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
0000'>16M 0000'>x 4 EDO 0000'>dram, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
0000'>16M 0000'>x 4-Bit Dynamic RAM 0000'>16M 0000'>x 4 EDO 0000'>dram, 60 ns, PDSO32
0000'>16M 0000'>x 4-Bit Dynamic RAM 0000'>16M 0000'>x 4 EDO 0000'>dram, 50 ns, PDSO32

File Size 334.00K  /  29 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4S51323PF-MEF90 K4S51323PF-MEF75 K4S51323P K4S51323PF-MEF1L K4S51323PF-MF750JR K4S51323PF-EF750 K4S51323PF-MF1L0 K4S51323PF-EF900
Description 0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 7 ns, PBGA90 LEAD FREE, FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 7 ns, PBGA90 FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 6 ns, PBGA90 LEAD FREE, FBGA-90
0000'>16M 0000'>x 32 SYNCHRONOUS 0000'>dram, 6 ns, PBGA90 FBGA-90
4M 0000'>x 32Bit 0000'>x 4 Banks Mobile-S0000'>dram
From old datasheet system

File Size 139.48K  /  12 Page

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    Infineon
SIEMEns[Siemens Semiconductor Group]
Part No. HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HYB5117800-50 HYB3117800BSJ-50 Q67100-Q1093 HB17800C HYB3117800BSJ-60 HYB5117800BSJ-50- Q67100-Q1092
Description 2M 0000'>x 8 Bit 2k 5 V 60 ns FPM 0000'>dram
2M 0000'>x 8 Bit 2k 3.3 V 60 ns FPM 0000'>dram
2M 0000'>x 8 Bit 2k 3.3 V 50 ns FPM 0000'>dram
2M 0000'>x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M 0000'>x 8-Bit Dynamic RAM
From old datasheet system

File Size 176.79K  /  23 Page

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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560000'>163PF K4S560000'>163PF-F1L K4S560000'>163PF-F90 K4S560000'>163PF-RG K4S560000'>163PF-RG_F90 K4S560000'>163PF-RG_F1L K4S560000'>163PF-RG_F75 K4S560000'>163PF-RG/F90 K4S560000'>163PF-RG/F1L K4S560000'>163PF-RG/F75 K4S560000'>163PF-RF750 K4S560000'>163PF-BF900 K4S560000'>163PF-RG750 K4S560000'>163PF-BG750 K4S560000'>163PF-RF900
Description 0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PBGA54 LEAD FREE, FBGA-54
0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 7 ns, PBGA54 LEAD FREE, FBGA-54
0000'>16M 0000'>x 0000'>16 SYNCHRONOUS 0000'>dram, 6 ns, PBGA54 FBGA-54
4M 0000'>x 0000'>16Bit 0000'>x 4 Banks Mobile S0000'>dram in 54FBGA 4米0000'>16 × 4银行4FBGA移动S0000'>dram
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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For 8m x 16 ddr dram 0 75 ns pbga6 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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