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  avionics applications rf micro Datasheet PDF File

For avionics applications rf micro Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    HVV1011-300 HVV1011-300-EK

HVVi Semiconductors, Inc.
Part No. HVV1011-300 HVV1011-300-EK
Description L-Band avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S applications
L-Band avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S applications

File Size 827.83K  /  5 Page

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    TOSHIBA
Part No. 2SD1784
Description Field Effect Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) micro Motor Drive, Hammer Drive applications Switching applications Power Amplifier applications

File Size 113.57K  /  5 Page

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    2SB106709

Toshiba Semiconductor
Part No. 2SB106709
Description micro-Moter Drive, Hammer Drive applications Switching applications Power Amplifier applications

File Size 167.91K  /  5 Page

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    JTDB75

Advanced Power Technology
Electronic Theatre Controls, Inc.
ETC
GHz Technology
List of Unclassifed Manufacturers
Part No. JTDB75
Description rf Power Transistors: avionics
75 Watts, 36 Volts, Pulsed avionics 960 - 1215 MHz
High power COMMON BASE bipolar transistor.

File Size 229.50K  /  3 Page

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    JTDA50

Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
Part No. JTDA50
Description rf Power Transistors: avionics
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed avionics 960 - 1215 MHz

File Size 24.35K  /  1 Page

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    HVV1012-250 HVV1012-250-EK

HVVi Semiconductors, Inc.
Part No. HVV1012-250 HVV1012-250-EK
Description L-Band avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF applications
L-Band avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF applications

File Size 684.79K  /  5 Page

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    0912-45

Stackpole Electronics, Inc.
GHZTECH[GHz Technology]
Advanced Power Technology
Part No. 0912-45
Description TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-67VAR 晶体管|晶体管|叩| 4.5AI(丙)|7VAR
45 Watts, 50 Volts, Pulsed avionics 960 - 1215 MHz
rf Power Transistors: avionics

File Size 281.06K  /  3 Page

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    DME500

Advanced Power Technology
GHZTECH[GHz Technology]
rfMD[rf micro Devices]
rf micro Devices, Inc.
Part No. DME500
Description rf Power Transistors: avionics
500 Watts, 50 Volts, Pulsed avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
From old datasheet system

File Size 250.29K  /  3 Page

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    HVV0912-150 HVV0912-150-EK

HVVi Semiconductors, Inc.
Part No. HVV0912-150 HVV0912-150-EK
Description L-Band avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF applications
L-Band avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF applications

File Size 816.62K  /  5 Page

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    JTDB25

Advanced Power Technology
Electronic Theatre Controls, Inc.
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. JTDB25
Description rf Power Transistors: avionics
25 Watts, 36 Volts, Pulsed avionics 960 - 1215 MHz 25瓦,36伏特,脉冲航空电子设960 - 1215兆赫
High power COMMON BASE bipolar transistor.

File Size 109.19K  /  2 Page

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For avionics applications rf micro Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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