bipolar transistor modules rat pdf Datasheet P14 Description --- IC-ON-LINE


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bipolar transistor modules rat Datasheet PDF File

For bipolar transistor modules rat Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Central Semiconductor Corp
Part No.	CZT122 CZT127
Description	SMD bipolar Power transistor PNP Darlington SMD bipolar Power transistor NPN Darlington SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON transistor
File Size	71.12K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	RM200DA-20F
Description	Fast Recovery Diode modules, F Series (for bipolar speed switching)
File Size	55.01K / 3 Page	View it Online	Download Datasheet

				ROHM[Rohm] Rohm CO.,LTD.
Part No.	2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR
Description	transistor \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset transistors > Medium Power bipolar transistors(0.5W-1.0W) transistors > Small Signal bipolar transistors(up to 0.6W) Low Vce(sat) transistor (-20V, -3A) From old datasheet system Low VCE(sat) transistor(低VCE(sat)晶体 Low Vce(sat) transistor (-20V/ -3A)
File Size	99.96K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC29K IRG4BC30K IRG4BC30
Description	600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
File Size	135.84K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH40K
Description	1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	154.31K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BUL146FG BUL146G
Description	bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER transistor, TO-220AB SWITCHMODE NPN bipolar Power transistor
File Size	218.29K / 11 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1
Description	TERM BLOCK HDR 5.08MM 3POS PCB Low Current/ High Performance NPN Silicon bipolar transistor Low Current High Performance NPN Silicon bipolar transistor Low Current, High Performance NPN Silicon bipolar transistor
File Size	121.09K / 10 Page	View it Online	Download Datasheet

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description	-3A / -12V bipolar transistor -2A / -30V bipolar transistor High-gain Amplifier transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier transistor (120V, 50mA) High-Frequency Amplifier transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier transistor (32V , 0.3A) Medium Power transistor (32V, 1A) Power transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description	INSULATED GATE bipolar transistor Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE bipolar transistor
File Size	647.10K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2H RM500UZ-24 RM500UZ-2H RM500UZ-H
Description	Rectifier Diodes, 800V Integrated Gate bipolar transistor (IGBT) modules: 250V HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型 BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型
File Size	50.03K / 3 Page	View it Online	Download Datasheet

For bipolar transistor modules rat Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |